BUK9Y14-80E NXP

BUK9Y14-80E N-channel 80 V,15 m logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 62 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 147 W tot mb Static characteristics R drain-source on-state V = 5 V I = 15 A T = 25 C Fig. 11 - 12.2 15 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 15 A V = 64 V - 8.7 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 j Scan or click this QR code to view the latest information for this productNXP Semiconductors BUK9Y14-80E N-channel 80 V,15 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y14-80E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y14-80E 91480E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage R = 20 k - 80 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 2 - 147 W tot mb I drain current T = 25 C V = 5 V Fig. 1 - 62 A D mb GS T = 100 C V = 5 V Fig. 1 - 44 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 250 A DM mb p BUK9Y14-80E All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 11 November 2014 2 / 13