BUK9Y19-55B,115 Nexperia

BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 29 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features 175 C rated Logic level compatible Q101 compliant Very low on-state resistance 1.3 Applications 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit I drain current V =5V T =25 C --46 A D GS mb see Figure 1 and 4 P total power dissipation T =25 C see Figure 2 --85 W tot mb Static characteristics R drain-source on-state V =5V I =20A - 16.3 19 m DSon GS D resistance T =25 C see Figure 12 and j 13 Avalanche ruggedness E non-repetitive I =46A V 55 V --80 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T =25 C unclamped j(init)Nexperia BUK9Y19-55B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source 3 S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y19-55B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C-55V DS j j V drain-gate voltage R =20k -55 V DGR GS V gate-source voltage -15 15 V GS I drain current T =25 C V = 5 V see Figure 1 and 4 -46 A D mb GS T = 100 C V = 5 V see Figure 1 -32 A mb GS I peak drain current T =25 C t 10 s pulsed see Figure 4 - 184 A DM mb p P total power dissipation T =25 C see Figure 2 -85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Avalanche ruggedness E non-repetitive I =46A V 55 V R =50 V =5V -80 mJ DS(AL)S D sup GS GS drain-source avalanche T =25 C unclamped j(init) energy 1 2 E repetitive drain-source see Figure 3 --J DS(AL)R 3 avalanche energy Source-drain diode I source current T =25 C-46A S mb I peak source current t 10 s pulsed T =25 C - 184 A SM p mb 1 Single-pulse avalanche rating limited by maximum junction temperature of 175 C. 2 Repetitive avalanche rating limited by average junction temperature of 170 C. 3 Refer to application note AN10273 for further information. BUK9Y19-55B 3 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 29 February 2008 2 of 12