BUK9Y14-40B NXP

BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Q101 compliant on-state resistance Suitable for logic level gate drive Suitable for thermally demanding sources environments due to 175 C rating 1.3 Applications Air bag Automotive ABS systems Automotive transmission control Diesel injection systems Fuel pump and injection Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C --40 V DS j j I drain current V =5V T =25 C --56 A D GS mb see Figure 4 and 1 P total power dissipation T =25 C see Figure 2 --85 W tot mb Dynamic characteristics Q gate-drain charge V =5V I =10A -9 -nC GD GS D V = 32 V see Figure 14 DS Static characteristics R drain-source on-state V =5V I =20A - 1214m DSon GS D resistance T =25 C see Figure 12 and j 13 Avalanche ruggedness E non-repetitive I =56A V 40 V --89 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T =25 C unclamped j(init)NXP Semiconductors BUK9Y14-40B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1, 2, 3 S source mb D 4 G gate mb D mounting base G connected to drain mbb076 S 1234 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y14-40B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C-40V DS j j V gate-source voltage 15 15 V GS I drain current T =25 C V = 5 V see Figure 4 and 1 -56 A D mb GS T = 100 C V = 5 V see Figure 1 -40 A mb GS I peak drain current T =25 C t 10 s pulsed see Figure 4 - 226 A DM mb p P total power dissipation T =25 C see Figure 2 -85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Avalanche ruggedness E non-repetitive I =56A V 40 V R =50 V =5V -89 mJ DS(AL)S D sup GS GS drain-source avalanche T =25 C unclamped j(init) energy 1 2 E repetitive drain-source see Figure 3 --J DS(AL)R 3 avalanche energy Source-drain diode I source current T =25 C-56A S mb I peak source current t 10 s pulsed T =25 C - 226 A SM p mb 1 Single-pulse avalanche rating limited by maximum junction temperature of 175 C. 2 Repetitive avalanche rating limited by average junction temperature of 170 C. 3 Refer to application note AN10273 for further information. BUK9Y14-40B 3 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 2 June 2008 2 of 12