X-On Electronics has gained recognition as a prominent supplier of BUK9Y12-40E,115 MOSFET across the USA, India, Europe, Australia, and various other global locations. BUK9Y12-40E,115 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BUK9Y12-40E,115 Nexperia

BUK9Y12-40E,115 electronic component of Nexperia
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See Product Specifications
Part No.BUK9Y12-40E,115
Manufacturer: Nexperia
Category: MOSFET
Description: NXP Semiconductors MOSFET N-channel TrenchMOS logic level FET
Datasheet: BUK9Y12-40E,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7291 ea
Line Total: USD 0.73

Availability - 4529
Ship by Fri. 09 Aug to Tue. 13 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1556
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 0.9517
10 : USD 0.8237
25 : USD 0.8085
100 : USD 0.5596
250 : USD 0.5541
500 : USD 0.481
1000 : USD 0.3336

1242
Ship by Mon. 12 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6021
10 : USD 0.5346
30 : USD 0.5009
100 : USD 0.4671
500 : USD 0.4464
1500 : USD 0.4351

4529
Ship by Fri. 09 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7291
10 : USD 0.6279
100 : USD 0.4462
500 : USD 0.383
1000 : USD 0.3726
1500 : USD 0.3301
3000 : USD 0.3001
9000 : USD 0.2909
24000 : USD 0.2898

1556
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 23
Multiples : 1
23 : USD 0.8237
25 : USD 0.8085
100 : USD 0.5596
250 : USD 0.5541
500 : USD 0.481
1000 : USD 0.3336

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the BUK9Y12-40E,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y12-40E,115 and other electronic components in the MOSFET category and beyond.

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The BUK9Y12-40E,115 is a MOSFET N-channel logic level FET manufactured by Nexperia, a subsidiary of NXP Semiconductors. This power semiconductor has an operating drain-to-source voltage of 40 V and a peak drain current of 115 A, as well as an impressive on resistance of ~35 mO. It is designed for use in low-side and high-current switching applications, featuring a rugged surface-mount package and faster switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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