BUK9J0R9-40HX Nexperia

BUK9J0R9-40H N-channel 40 V, 0.9 m logic level MOSFET in LFPAK56E 7 October 2019 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits Fully automotive qualified to AEC-Q101: 175 C rating suitable for thermally demanding environments Trench 9 Superjunction technology: Reduced cell pitch enables enhanced power density and efficiency with lower R in DSon same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight V limits enable easy paralleling of MOSFETs GS(th) LFPAK Gull Wing leads: High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint LFPAK copper clip technology: Improved reliability, with reduced R and R th DSon Increases maximum current capability and improved current spreading 3. Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 220 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 500 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 0.53 0.82 0.94 m DSon GS D j resistance Fig. 11Nexperia BUK9J0R9-40H N-channel 40 V, 0.9 m logic level MOSFET in LFPAK56E Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge I = 25 A V = 20 V V = 4.5 V - 12.7 25.3 nC GD D DS GS Fig. 13 Fig. 14 Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V 2 - 52.6 - nC r S S GS V = 20 V T = 25 C DS j S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.77 - S S GS V = 20 V T = 25 C Fig. 17 DS j 1 220A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 2 includes capacitive recovery 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected to drain 1 2 3 4 LFPAK56E Power- SO8 (SOT1023) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9J0R9-40H LFPAK56E plastic, single-ended surface-mounted package (LFPAK56) SOT1023 Power-SO8 4 leads 1.27 mm pitch 7. Marking Table 4. Marking codes Type number Marking code BUK9J0R9-40H 90H940E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V gate-source voltage DC T 175 C -10 16 V GS j BUK9J0R9-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 7 October 2019 2 / 12