X-On Electronics has gained recognition as a prominent supplier of BUK9M11-40EX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9M11-40EX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9M11-40EX Nexperia

BUK9M11-40EX electronic component of Nexperia
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Part No.BUK9M11-40EX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET BUK9M11-40E/MLFPAK/REEL 7" Q1/
Datasheet: BUK9M11-40EX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6572 ea
Line Total: USD 0.66 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.4371
3000 : USD 0.4047
4500 : USD 0.4047
6000 : USD 0.4047
7500 : USD 0.4047

0
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.3212

0
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6572
10 : USD 0.5294
100 : USD 0.4005
500 : USD 0.3408
1000 : USD 0.3025
1500 : USD 0.2769
3000 : USD 0.262
9000 : USD 0.261

0
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0208
5 : USD 0.766
25 : USD 0.6898
30 : USD 0.5164
81 : USD 0.4875

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Transistor Type
Brand
Fall Time
Id Continuous Drain Current
Numofpackaging
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BUK9M11-40EX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9M11-40EX and other electronic components in the MOSFETs category and beyond.

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BUK9M11-40E N-channel 40 V, 11 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 53 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 62 W tot mb Static characteristics R drain-source on-state V = 5 V I = 15 A T = 25 C Fig. 11 - 9.3 11 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 15 A V = 32 V V = 5 V - 5 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9M11-40E N-channel 40 V, 11 m logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S Source D 2 S Source G 3 S Source mbb076 S 4 G Gate mb D Mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9M11-40E LFPAK33 Plastic single ended surface mounted package SOT1210 (LFPAK33) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9M11-40E 91140E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage DC T 175 C -10 10 V GS j Pulsed T 175 C 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 62 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 53 A D GS mb V = 5 V T = 100 C Fig. 2 - 37 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 211 A DM p mb BUK9M11-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 September 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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