BUK9880-55A,115 NXP

BUK9880-55A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources 3. Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 55 V DS j j I drain current V = 5 V T = 25 C Fig. 3 Fig. 2 - - 7 A D GS sp P total power dissipation T = 25 C Fig. 1 - - 8 W tot sp Static characteristics R drain-source on-state V = 10 V I = 8 A T = 25 C - 62 73 m DSon GS D j resistance V = 4.5 V I = 8 A T = 25 C - - 89 m GS D j V = 5 V I = 8 A T = 25 C Fig. 13 - 68 80 m GS D j Fig. 14 Avalanche ruggedness E non-repetitive drain- I = 6 A V 55 V R = 50 - - 36 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy Scan or click this QR code to view the latest information for this product SOT223NXP Semiconductors BUK9880-55A N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 4 D 2 D drain G 3 S source 1 2 3 mbb076 S 4 D drain SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9880-55A SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BUK9880-55A/CU SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9880-55A 988055A BUK9880-55A/CU 988055 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 55 V DS j j V drain-gate voltage R = 20 k - 55 V DGR GS V gate-source voltage -15 15 V GS P total power dissipation T = 25 C Fig. 1 - 8 W tot sp I drain current T = 100 C V = 5 V Fig. 2 - 4 A D sp GS T = 25 C V = 5 V Fig. 3 Fig. 2 - 7 A sp GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 30 A DM sp p BUK9880-55A All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 19 March 2014 2 / 13