BUK9E06-55A,127 NXP

BUK9E06-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage 1 I drain current V =5V T =25C --75 A D GS j see Figure 3 see Figure 1 P total power T = 25 C see Figure 2 --300W tot mb dissipation Static characteristics R drain-source V =10V I =25A -4.8 5.8 m DSon GS D on-state T =25C j resistance V =4.5 V I =25A --6.7 m GS D T =25C j V =5V I =25A -5.3 6.3 m GS D T =25C j see Figure 12 see Figure 13 Avalanche ruggedness E non-repetitive I =75A V 55 V --1.1 J DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init)BUK9E06-55A Nexperia N-channel TrenchMOS logic level FET 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9E06-55A I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 BUK9E06-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 31 May 2010 2 of 14