GA100SICP12-227 Silicon Carbide Junction V = 1200 V DS Transistor/Schottky Diode Co-pack R = 10 m DS(ON) I = 160 A D ( 25C) I = 100 A D ( 115C) h = 85 FE ( 25C) Features Package 175 C Maximum Operating Temperature RoHS Compliant Gate Oxide Free SiC Switch D G Optional Gate Return Pin GR Exceptional Safe Operating Area G D Integrated SiC Schottky Rectifier Pin D - Drain Excellent Gain Linearity S Pin S - Source Temperature Independent Switching Performance Pin GR - Gate Return GR Low Output Capacitance S Pin G - Gate Positive Temperature Coefficient of R DS,ON Isolated Baseplate Please note: The Source and Gate Return Suitable for Connecting an Anti-parallel Diode SOT-227 pins are not exchangeable. Their exchange might lead to malfunction. Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs Down Hole Oil Drilling, Geothermal Instrumentation > 20 s Short-Circuit Withstand Capability Hybrid Electric Vehicles (HEV) Lowest-in-class Conduction Losses Solar Inverters High Circuit Efficiency Switched-Mode Power Supply (SMPS) Minimal Input Signal Distortion Power Factor Correction (PFC) High Amplifier Bandwidth Induction Heating Reduced cooling requirements Uninterruptible Power Supply (UPS) Reduced system size Motor Drives Table of Contents Section I: Absolute Maximum Ratings .......................................................................................................... 1 Section II: Static Electrical Characteristics ................................................................................................... 2 Section III: Dynamic Electrical Characteristics ............................................................................................ 2 Section IV: Figures .......................................................................................................................................... 4 Section V: Driving the GA100SICP12-227 ..................................................................................................... 8 Section VI: Package Dimensions ................................................................................................................. 12 Section VII: SPICE Model Parameters ......................................................................................................... 14 Section I: Absolute Maximum Ratings Parameter Symbol Conditions Value Unit Notes SiC Junction Transistor Drain Source Voltage V V = 0 V 1200 V DS GS Continuous Drain Current I T = 25C 160 A Fig. 17 D C T = 115C Continuous Drain Current I C 100 A Fig. 17 D Continuous Gate Current I 7 A G Continuous Gate Return Current I 7 GR o T = 175 C, I = 100 D,max VJ Turn-Off Safe Operating Area RBSOA A Fig. 19 Clamped Inductive Load V V DS DSmax o T = 175 C, I = 1 A, V = 800 V, VJ G DS Short Circuit Safe Operating Area SCSOA >20 s Non Repetitive Reverse Gate Source Voltage V 30 V SG Reverse Drain Source Voltage V 25 V SD Power Dissipation P T = 25 C / 115 C, t > 100 ms 535 / 214 W Fig. 16 tot C p Operating and storage temperature T -55 to 175 C stg Dec 2015 Latest version of this datasheet at: GA100SICP12-227 Parameter Symbol Conditions Value Unit Notes Free-Wheeling SiC Diode Repetitive peak reverse voltage V 1200 V RRM Continuous forward current I T 135 C 100 A F C RMS forward current I T 135 C 174 A F(RMS) C Surge non-repetitive forward current, T = 25 C, t = 10 ms 700 C P I A F,SM T = 135 C, t = 10 ms Half Sine Wave C P 626 Non-repetitive peak forward current I T = 25 C, t = 10 s 3250 A F,max C P 2 2 T = 25 C, t = 10 ms 900 2 C P I t value i dt A s T = 135 C, t = 10 ms C P 600 Thermal Characteristics Thermal resistance, junction - case R SiC Junction Transistor 0.28 C/W Fig. 20 thJC SiC Diode Thermal resistance, junction - case R 0.26 C/W Fig. 21 thJC Section II: Static Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: On State 10 I = 100 A, T = 25 C D j Drain Source On Resistance R I = 100 A, T = 150 C 15 m Fig. 5 DS(ON) D j I = 100 A, T = 175 C D j 18 I = 100 A, I /I = 40, T = 25 C 3.42 D D G j Gate Source Saturation Voltage V V Fig. 7 GS,SAT I = 100 A, I /I = 30, T = 175 C D D G j 3.23 85 V = 8 V, I = 100 A, T = 25 C DS D j DC Current Gain h V = 8 V, I = 100 A, T = 125 C 57 Fig. 4 FE DS D j V = 8 V, I = 100 A, T = 175 C DS D j 51 I = 100 A, T = 25 C 1.4 1.8 F j FWD forward voltage V V F I = 100 A, T = 175 C F j 2.1 3.0 B: Off State 100 V = 1200 V, V = 0 V, T = 25 C DS GS j Drain Leakage Current I V = 1200 V, V = 0 V, T = 150 C 300 A Fig. 8 DSS DS GS j V = 1200 V, V = 0 V, T = 175 C DS GS j 600 Gate Leakage Current I V = 20 V, T = 25 C 40 nA SG SG j Section III: Dynamic Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: Capacitance and Gate Charge V = 0 V, V = 800 V, f = 1 MHz Input Capacitance C GS DS 16.1 nF Fig. 9 iss 6480 V = 1 V, f = 1 MHz DS V = 400 V, f = 1 MHz Reverse Transfer/Output Capacitance C /C DS 570 pF Fig. 9 rss oss V = 800 V, f = 1 MHz DS 440 V = 400 V 375 DS Total Output Capacitance Charge Q nC oss V = 800 V DS 570 V = 0 V, V = 800 V, f = 1 MHz Output Capacitance Stored Energy E GS DS 170 J Fig. 10 OSS Effective Output Capacitance, C I = constant, V = 0 V, V = 0800 V 715 pF oss,tr D GS DS time related Effective Output Capacitance, V = 0 V, V = 0800 V C GS DS 535 pF oss,er energy related Gate-Source Charge Q V = -53 V 130 nC GS GS Gate-Drain Charge Q V = 0 V, V = 0800 V 570 nC GD GS DS Gate Charge - Total Q 700 nC G Dec 2015 Latest version of this datasheet at: