BUK9907-55ATE NXP

BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 7 February 2002 Product data 1. Description N-channel enhancement mode eld-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: 2 BUK9107-55ATE in SOT426 (D -PAK) BUK9907-55ATE in SOT263B. 2. Features Typical on-state resistance 5.8 m Q101 compliant ESD protection Monolithically integrated temperature sensor for overload protection. 3. Applications Automotive and power switching: 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)) Protected drive for lamps. 4. Pinning information Table 1: Pinning - SOT426 and SOT263B simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) mb a d 2 anode (a) mb 3 drain (d) g 4 cathode (k) 12354 5 source (s) mb mounting base MBL317 s k connected to drain (d) Front view MBK127 15 MBL263 2 SOT426 (D -PAK) SOT263BBUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V drain-source voltage (DC) T =25 C - 55 V DS j I drain current (DC) T =25 C V = 5 V - 140 A D mb GS P total power dissipation T =25 C - 272 W tot mb T junction temperature - 175 C j R drain-source on-state resistance T =25 C V =5V I =50A 5.8 7 m DSon j GS D T =25 C V = 4.5 V I =50A 6 7.7 m j GS D T =25 C V = 10 V I = 50 A 5.2 6.2 m j GS D V temperature sense diode forward Tj = 25 C I = 250 A 658 668 mV F F voltage S temperature sense diode temperature - 55 C<T < 175 C I = 250 A - 1.54 - 1.68 mV/K F j F coefcient 9397 750 09138 Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 7 February 2002 2 of 17