Product Information

BUK9640-100A,118

BUK9640-100A,118 electronic component of Nexperia

Datasheet
MOSFET TAPE13 PWR-MOS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 0.8105 ea
Line Total: USD 648.4

21728 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 800  Multiples: 800
Pack Size: 800

 More Buying Options & Price Grid(s)

Availability Price Quantity
21728 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 800
Multiples : 800
800 : USD 0.8105

260 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.5187
10 : USD 1.3289
100 : USD 1.0987
500 : USD 0.9706
800 : USD 0.8116
2400 : USD 0.8116

605 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 9
Multiples : 1
9 : USD 1.1021
10 : USD 1.0956
25 : USD 0.9049
100 : USD 0.8869

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK9640-100A N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 2 Fig. 3 - - 39 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 158 W tot mb Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - - 43 m DSon GS D j resistance V = 10 V I = 25 A T = 25 C - 29 39 m GS D j V = 5 V I = 25 A T = 25 C - 34 40 m GS D j Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 80 V - 20 - nC GD GS D DS T = 25 C Fig. 13 jNexperia BUK9640-100A N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- I = 39 A V 100 V R = 50 - - 182 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 G gate 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make a connection to pin 2. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9640-100A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK9640-100A BUK9640-100A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage -15 15 V GS BUK9640-100A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 13 March 2014 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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