BUK965R8-100E NXP

BUK965R8-100E N-channel TrenchMOS logic level FET Rev. 2 16 May 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Repetitive avalanche rated True logic level gate with Vgst(th) rating of greater than 0.5V at 175 C 1.3 Applications 12V, 24V and 48V Automotive Transmission control systems Ultra high performance power Motors, lamps and solenoid control switching Start-Stop micro-hybrid applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current V =5V T =25C see Figure 1 - - 120 A D GS mb P total power dissipation T =25C see Figure 2 - - 357 W tot mb Static characteristics R drain-source on-state V =5V I =25A T =25C - 4.62 5.8 m DSon GS D j resistance see Figure 11 Dynamic characteristics Q gate-drain charge V =5V I =25A V =80V -51 -nC GD GS D DS see Figure 13 see Figure 14 1 Continuous current is limited by package. D2PAKBUK965R8-100E NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK965R8-100E D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK965R8-100E BUK965R8-100E BUK965R8-100E All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 16 May 2012 2 of 14