BUK9675-100A,118 Nexperia

BUK9675-100A N-channel TrenchMOS logic level FET 18 August 2015 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 3. Applications Automotive and general purpose power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 2 - - 23 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 98 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 25 C - 55 72 m DSon GS D j resistance Fig. 12 V = 5 V I = 10 A T = 25 C Fig. 12 - 60 75 m GS D j Avalanche ruggedness E non-repetitive drain- I = 23 A V 100 V R = 50 1 2 - - 100 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy Fig. 4 1 Single-pulse avalanche rating limited by maximum junction temperature of 175 C. 2 Refer to application note AN10273 for further information.Nexperia BUK9675-100A N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9675-100A D2PAK plastic single-ended surface-mounted package SOT404 (D2PAK) 3 leads (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK9675-100A BUK9675-100A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage -15 15 V GS P total power dissipation T = 25 C Fig. 1 - 98 W tot mb I drain current T = 100 C V = 5 V Fig. 2 - 16 A D mb GS T = 25 C V = 5 V Fig. 2 - 23 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 92 A DM mb p T storage temperature -55 175 C stg T junction temperature -55 175 C j BUK9675-100A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 18 August 2015 2 / 12