BUK969R3-100E NXP

BUK969R3-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 C 1.3 Applications 12V, 24V and 48V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 263 W tot mb Static characteristics R drain-source on-state V = 5 V I = 25 A T = 25 C Fig. 11 - 7.49 9.3 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 80 V - 34 - nC GD GS D DS Fig. 13 Fig. 14 Scan or click this QR code to view the latest information for this productNXP Semiconductors BUK969R3-100E N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK969R3-100E D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK969R3-100E BUK969R3-100E 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 - 100 A D mb GS T = 100 C V = 5 V Fig. 1 - 71 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 405 A DM mb p P total power dissipation T = 25 C Fig. 2 - 263 W tot mb T storage temperature -55 175 C stg BUK969R3-100E All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 5 October 2012 2 / 13