BUK9840-55 NXP

BUK9840-55 N-channel TrenchMOS logic level FET Rev. 03 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Electrostatically robust due to integrated protection diodes 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150C --55 V DS j j I drain current T = 25 C - - 10.7 A D sp P total power dissipation T=25C --1.8 W tot amb Static characteristics R drain-source on-state V =5V I =5A T = 25 C - 30 40 m DSon GS D j resistance Avalanche ruggedness E non-repetitive I =3.6 A V 25 V R =50 --60 mJ DS(AL)S D sup GS drain-source V =5V T = 25 C unclamped GS j(init) avalanche energy SOT223BUK9840-55 NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 4 2 D drain 3S source G 4 D drain 132 SOT223 (SOT223) S sym116 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9840-55 SOT223 plastic surface-mounted package with increased heatsink 4 SOT223 leads 4. Marking Table 4. Marking codes 1 Type number Marking code BUK9840-55 94055 1 % = placeholder for manufacturing site code BUK9840-55 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 20 April 2011 2 of 12