Product Information

BUK963R1-40E,118

BUK963R1-40E,118 electronic component of Nexperia

Datasheet
MOSFET N-channel TrenchMOS logic level FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4800: USD 1.7948 ea
Line Total: USD 8615.04

0 - Global Stock
MOQ: 4800  Multiples: 4800
Pack Size: 4800

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 4800
Multiples : 4800
4800 : USD 1.5625

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Package Case
Brand
Ciss Input Capacitance
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK963R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 C 1.3 Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 5 V T = 25 C Fig. 1 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 234 W tot mb Static characteristics R drain-source on-state V = 5 V I = 25 A T = 25 C Fig. 11 - 2.6 3.1 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 32 V - 25.8 - nC GD GS D DS Fig. 13 Fig. 14 1 Continuous current is limited by package.Nexperia BUK963R1-40E N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK963R1-40E D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage T = 25 C -10 10 V GS j T = 25 C lifetime = 100 hours -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 1 - 100 A D mb GS T = 100 C V = 5 V Fig. 1 1 - 100 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 794 A DM mb p P total power dissipation T = 25 C Fig. 2 - 234 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T = 25 C 1 - 100 A S mb I peak source current pulsed t 10 s T = 25 C - 794 A SM p mb BUK963R1-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 13 July 2012 2 / 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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