X-On Electronics has gained recognition as a prominent supplier of BUK7C08-55AITE,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7C08-55AITE,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7C08-55AITE,118 NXP

BUK7C08-55AITE,118 electronic component of NXP
BUK7C08-55AITE,118 NXP
BUK7C08-55AITE,118 MOSFETs
BUK7C08-55AITE,118  Semiconductors

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Part No. BUK7C08-55AITE,118
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET TRENCHPLUS MOSFET
Datasheet: BUK7C08-55AITE,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9564 ea
Line Total: USD 1.96 
Availability - 0
MOQ: 1  Multiples: 800
Pack Size: 800
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 800
1 : USD 1.9564
150 : USD 1.9315

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the BUK7C08-55AITE,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7C08-55AITE,118 and other electronic components in the MOSFETs category and beyond.

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BUK7C08-55AITE N-channel TrenchPLUS standard level FET Rev. 02 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature Low conduction losses due to low monitoring due to integrated on-state resistance temperature sensor Q101 compliant Electrostatically robust due to Reduced component count due to integrated protection diodes integrated current sensor 1.3 Applications Automotive and general purpose Electrical Power Assisted Steering power switching (EPAS) Fan control Variable Valve Timing for engines 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V =10V T =25C see Figure 2 1 -- 130 A D GS mb see Figure 3 Static characteristics R drain-source on-state V =10V I =50A T =25C see Figure 7 -6.8 8 m DSon GS D j resistance see Figure 8 I /I ratio of drain current to T >-55 C T <175 C V > 5 V 450 500 550 D sense j j GS sense current S temperature sense diode I = 250 A T >-55 C T < 175 C -1.4 -1.54 -1.68 mV/K F(TSD) F j j temperature coefficient V temperature sense diode I = 250 A T = 25 C 648 658 668 mV F(TSD) F j forward voltage 1 Current is limited by power dissipation chip rating.NXP Semiconductors BUK7C08-55AITE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate d a mb 2 ISENSE sense current 3 A anode 4D drain g 5 K cathode 4 6 KS Kelvin source 1 2 3 5 6 7 s k 7S source SOT427 I MBL362 sense Kelvin source (D2PAK) mb D mounting base connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7C08-55AITE D2PAK plastic single-ended surface-mounted package (D2PAK) 7 leads (one SOT427 lead cropped) BUK7C08-55AITE 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 17 February 2009 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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