X-On Electronics has gained recognition as a prominent supplier of BUK7K35-60EX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7K35-60EX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7K35-60EX Nexperia

BUK7K35-60EX electronic component of Nexperia
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Part No.BUK7K35-60EX
Manufacturer: Nexperia
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 60V 20.7A 38W Surface Mount LFPAK56D
Datasheet: BUK7K35-60EX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.232 ea
Line Total: USD 1.23 
Availability - 4472
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4472
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.232
10 : USD 0.8382
100 : USD 0.6105
500 : USD 0.5071
1000 : USD 0.5049
1500 : USD 0.418
3000 : USD 0.4059
9000 : USD 0.396

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the BUK7K35-60EX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7K35-60EX and other electronic components in the MOSFETs category and beyond.

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BUK7K35-60E Dual N-channel 60 V, 30 m standard level MOSFET 15 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V of greater than 1 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 10 V T = 25 C Fig. 1 - - 20.7 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 38 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 10 V I = 5 A T = 25 C Fig. 11 - 24 30 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 5 A V = 48 V V = 10 V - 4.7 - nC GD D DS GS T = 25 C Fig. 14 Fig. 13 jNexperia BUK7K35-60E Dual N-channel 60 V, 30 m standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7K35-60E LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7K35-60E 73560E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 - 20.7 A D mb GS T = 100 C V = 10 V Fig. 1 - 17 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 95 A DM mb p P total power dissipation T = 25 C Fig. 2 - 38 W tot mb BUK7K35-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 November 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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