X-On Electronics has gained recognition as a prominent supplier of BUK92150-55A,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK92150-55A,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK92150-55A,118 Nexperia

BUK92150-55A,118 electronic component of Nexperia
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Part No.BUK92150-55A,118
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET TAPE13 PWR-MOS
Datasheet: BUK92150-55A,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.2774
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8705
10 : USD 0.7378
100 : USD 0.553
500 : USD 0.4055
1000 : USD 0.3133
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.1956
5000 : USD 0.1956
7500 : USD 0.1956
10000 : USD 0.1956
12500 : USD 0.1956
N/A

Obsolete
0
MOQ : 10000
Multiples : 10000
10000 : USD 0.3647
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0619
10 : USD 0.8452
100 : USD 0.263
500 : USD 0.2225
1000 : USD 0.2013
2500 : USD 0.1792
10000 : USD 0.1782
25000 : USD 0.1743
50000 : USD 0.1667
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.1976
N/A

Obsolete
0
MOQ : 33
Multiples : 33
33 : USD 0.2925
100 : USD 0.242
250 : USD 0.2086
500 : USD 0.2044
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK92150-55A,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK92150-55A,118 and other electronic components in the MOSFETs category and beyond.

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Image Part-Description
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BUK92150-55A N-channel TrenchMOS logic level FET 12 June 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V = 5 V T = 25 C Fig. 2 Fig. 3 - - 11 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 36 W tot mb Static characteristics R drain-source on-state V = 10 V I = 5 A T = 25 C - 97 125 m DSon GS D j resistance V = 5 V I = 5 A T = 175 C - - 280 m GS D j Fig. 11 Fig. 12 V = 4.5 V I = 5 A T = 25 C - - 155 m GS D j V = 5 V I = 5 A T = 25 C Fig. 11 - 120 140 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge V = 5 V I = 5 A V = 44 V - 2.6 - nC GD GS D DS T = 25 C Fig. 13 jNexperia BUK92150-55A N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- I = 11 A V 55 V R = 50 - - 16 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 G gate 2 D Drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK92150-55A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK92150-55A/CD DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK92150-55A 9215055A BUK92150-55A/CD 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j BUK92150-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 June 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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