3LP01C-TB-E ON Semiconductor

LOT No. LOT No. Ordering number : EN6645D 3LP01C P-Channel Small Signal MOSFET 3LP01C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I = --1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V = --30V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I = --100 A --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V =--10V, I = --50mA 80 110 mS DS D R (on)1 I = --50mA, V = --4V 8 10.4 DS D GS Static Drain to Source On-State Resistance R (on)2 I = --30mA, V = --2.5V 11 15.4 DS D GS R (on)3 I = --1mA, V = --1.5V 27 54 DS D GS Input Capacitance Ciss 7.5 pF Output Capacitance Coss V = --10V, f=1MHz 5.7 pF DS Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time t (on) 24 ns d Rise Time t 55 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 120 ns d Fall Time t 130 ns f Total Gate Charge Qg 1.43 nC Gate to Source Charge Qgs V = --10V, V = --10V, I = --100mA 0.18 nC DS GS D Gate to Drain Miller Charge Qgd 0.25 nC Diode Forward Voltage V I = --100mA, V =0V --0.83 --1.2 V SD S GS Switching Time Test Circuit V = --15V DD V IN 0V --4V I = --50mA D V R =300 IN L PW=10 s D V OUT D.C.1% G 3LP01C P.G 50 S No.6645-2/6