X-On Electronics has gained recognition as a prominent supplier of 3LN01S-TL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 3LN01S-TL-E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

3LN01S-TL-E ON Semiconductor

3LN01S-TL-E electronic component of ON Semiconductor
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Part No.3LN01S-TL-E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 30 V 150mA (Ta) 150mW (Ta) Surface Mount SMCP
Datasheet: 3LN01S-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 0.0969 ea
Line Total: USD 0.78 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1219
6000 : USD 0.1151

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5703
10 : USD 0.4253
100 : USD 0.2651
500 : USD 0.1814
1000 : USD 0.1395

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 8
Multiples : 1
8 : USD 0.0969

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the 3LN01S-TL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 3LN01S-TL-E and other electronic components in the MOSFETs category and beyond.

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LOT No. LOT No. Ordering number : EN6957C 3LN01S N-Channel Small Signal MOSFET 3LN01S Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =100A 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =80mA 0.15 0.22 S DS D R (on)1 I =80mA, V =4V 2.9 3.7 DS D GS Static Drain to Source On-State Resistance R (on)2 I =40mA, V =2.5V 3.7 5.2 DS D GS R (on)3 I =10mA, V =1.5V 6.4 12.8 DS D GS Input Capacitance Ciss 7.0 pF Output Capacitance Coss V =10V, f=1MHz 5.9 pF DS Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 65 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 155 ns d Fall Time t 120 ns f Total Gate Charge Qg 1.58 nC Gate to Source Charge Qgs V =10V, V =10V, I =150mA 0.26 nC DS GS D Gate to Drain Miller Charge Qgd 0.31 nC Diode Forward Voltage V I =150mA, V =0V 0.87 1.2 V SD S GS Switching Time Test Circuit V =15V DD V IN 4V I =80mA D 0V R =187.5 L V IN D V OUT PW=10 s D.C.1% G 3LN01S P.G 50 S No.6957-2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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