X-On Electronics has gained recognition as a prominent supplier of 2N7002DW H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002DW H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002DW H6327 Infineon

2N7002DW H6327 electronic component of Infineon
2N7002DW H6327 Infineon
2N7002DW H6327 MOSFETs
2N7002DW H6327  Semiconductors

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See Product Specifications
Part No. 2N7002DW H6327
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 60V 300mA SOT-363-6
Datasheet: 2N7002DW H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3487 ea
Line Total: USD 0.35 
Availability - 165565
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4559
Ship by Fri. 09 May to Wed. 14 May
MOQ : 5
Multiples : 5
5 : USD 0.2198
50 : USD 0.176
150 : USD 0.1155
500 : USD 0.0929
3000 : USD 0.084
6000 : USD 0.0795
9000 : USD 0.0786

165565
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.3487
10 : USD 0.26
100 : USD 0.1416
1000 : USD 0.0671
3000 : USD 0.0594
9000 : USD 0.0495
24000 : USD 0.0473
45000 : USD 0.0451

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the 2N7002DW H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002DW H6327 and other electronic components in the MOSFETs category and beyond.

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2N7002DW OptiMOS Small-Signal-Transistor Product Summary Features V 60 V DS Dual N-channel R V =10 V 3 W DS(on),max GS Enhancement mode Logic level V =4.5 V 4 GS Avalanche rated I 0.3 A D Fast switching Qualified according to AEC Q101 PG-SOT363 100% lead-free RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking HalogenFree Packing 2N7002DW PG-SOT363 H6327: 3000 pcs/reel X8s Yes Non Dry 1) Symbol Conditions Value Unit Parameter I T =25C Continuous drain current 0.30 A D A T =70C 0.24 A Pulsed drain current I T =25C 1.2 D,pulse A E Avalanche energy, single pulse I =0.3A, R =25W 1.3 mJ AS D GS I =0.3A, V =48V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 20 V GS ESD class JESD22-A114 (HBM) class 0 (<250V) P T =25C Power dissipation 0.5 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) Remark: one of both transistors in operation. Rev.2.3 page 1 2014-09-192N7002DW Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 250 K/W thJA 2) junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V = 0V, I =250A 60 - - V (BR)DSS GS D V V =V , I =250A Gate threshold voltage 1.5 2.1 2.5 GS(th) DS GS D V =60V, V =-10V, DS GS I Drain-source leakage current - - 0.1 A D (off) T =25C j V =60V, DS - - 5 V =0V, T =150C GS j Gate-source leakage current I V =20V, V =0V - 1 10 nA GSS GS DS R V =4.5V, I =0.25A Drain-source on-state resistance - 2.0 4 W DS(on) GS D V =10V, I =0.5A - 1.6 3 GS D V >2 I R , DS D DS(on)max g Transconductance 0.2 0.36 - S fs I =0.24A D 2) 2 Perfomed on a 40x40mm FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70m thick and 20mm long. Rev.2.3 page 2 2014-09-19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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