2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features www.onsemi.com Low OnResistance Low Gate Threshold Voltage D Low Input Capacitance Fast Switching Speed S Low Input/Output Leakage G UltraSmall Surface Mount Package SC70 3 LEAD These Devices are PbFree and are RoHS Compliant CASE 419AB ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101 MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit 7KW DrainSource Voltage V 60 V DSS GateSource Voltage V 20 V GSS 7KW = Specific Device Marking Maximum Drain Current Continuous I 310 mA D T = 100C 195 mA J Pulsed 1.2 A D Operating Junction Temperature Range T 55 to C J +150 Storage Temperature Range T 55 to C STG +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. GS THERMAL CHARACTERISTICS Parameter Symbol Value Unit ORDERING INFORMATION Total Device Dissipation P 300 mW D Derating above T = 25C 2.4 mW/C A Device Package Shipping Thermal Resistance, R 410 C/W JA 2N7002KW SC70 3000 / Tape & Junction to Ambient* Reel *Device mounted on FR4 PCB, 1 x 0.85 x 0.062. Minimum land pad size For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: May, 2018 Rev. 1 2N7002KW/D2N7002KW ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V =0V, I =10 A 60 V DSS GS D I Zero Gate Voltage Drain Current V =60V, V =0V 1.0 A DSS DS GS V =60V, V =0V, T = 125C 0.5 mA DS GS J I GateBody Leakage V =0V, V = 20 V 10 A GSS DS GS ON CHARACTERISTICS (Note 1) V Gate Threshold Voltage V =V , I = 250 A 1.1 2.1 V GS(th) DS GS D R Static DrainSource OnResistance V =10V, I = 500 mA 1.6 DS(on) GS D V =10V, I = 500 mA, T = 100C 2.4 GS D J V =5V, I = 50 mA 2 GS D V =5V, I = 50 mA, T = 100C 3 GS D J V DrainSource OnVoltage V =10V, I = 500 mA 3.75 V DS(on) GS D V =5V, I = 50 mA 1.5 GS D I OnState Drain Current V =10V, V = 2 V 500 mA D(on) GS DS g Forward Transconductance V =2V, I = 0.2 A 80 mS FS DS D DYNAMIC CHARACTERISTICS V =25V, V = 0 V, f = 1.0 MHz C Input Capacitance 50 pF iss DS GS C Output Capacitance 25 pF oss C Reverse Transfer Capacitance 5 pF rss SWITCHING CHARACTERISTICS t Turn-On Delay Time V =30V, R = 150 , V =10V, 20 ns d(on) DD L GS I = 200 mA, R =25 D GEN t Turn-Off Delay Time 60 ns d(off) DRAINSOURCE DIODE CHARACTERISTICS I Maximum Continuous DrainSource Diode Forward Current 115 mA S I Maximum Pulsed DrainSource Diode Forward Current 0.8 A SM V DrainSource Diode Forward Voltage V =0V, I = 115 mA 1.1 V SD GS S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. www.onsemi.com 2