JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW N-Channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-323 * 2.5) ( 3 ( +, * +) , ( 1. GATE 2. SOURCE 1 2 3. DRAIN FEATURE APPLICATION z High density cell design for Low R DS(on) % z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected M Equivalent Circuit MOSFET MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Drain-Source Voltage 60 V DS V -Source Voltage 0 V S I Continuous Drain Current 340 mA D I Pulsed Drain Current(note1) 800 mA DM P Power Dissipation 0.2 W D T Junction Temperature 150 j T Storage Temperature -55~+150 stg R Thermal Resistance from Junction to Ambient 625 /W JA Rev. - 1.0 www.jscj-elec.com 1 T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source Breakdown Voltage V (BR) DSS VGS = 0V, ID =250A 60 V GateThreshold Voltage (note 2) VGS(th) VDS =V , ID =1mA 1 1.3 V GS Zero Gate Voltage Drain Current IDSS VDS =48V,VGS = 0V 1 A Gate-Source Leakage Current IGSS VGS =20V, VDS = 0V 10 A VGS =4.5V, ID =200mA 1.1 3 Drain-Source On-Resistance (note 2) RDS(on) VGS =10V, ID=500mA 0.9 2.5 DYNAMIC PARAMETERS (note 3) Input Capacitance C 40 pF iss Output Capacitance C VDS =10V,VGS =0V,f =1MHz 30 pF oss Reverse Transfer Capacitance C 10 pF rss SWITCHING PARAMETERS(note 3) Turn-on Delay Time td(on) 10 ns V =10V,V =50V, R =50 GS DD G R =50 , R =250 Turn-off Delay Time td(off) GS L 15 ns V =0V,I =300mA,V =25V, GS S R Reverse Recovery Time trr 30 ns dIs/dt=-100A/us V =0V,I =300mA,V =25V GS S R Recovered Charge Qr 30 nC dIs/dt=-100A/us GATE-SOURCE ZENER DIODE Gate-Source Breakdown Voltage BV Igs=1mA(Open Drain)f 21.5f f30 V GSO DRAIN-SOURCE DIODE Diode Forward Voltage(note 2) V I =300mA, VGS = 0V 1.5 V SD S Continuous Diode Forward Current I 0.2 A S Pulsed Diode Forward Current(note1) I 0.53 A SM Notes : 1. Repetitive rating Pluse width limited by junction temperature. 2. Pulse Test : Pulse width 300s, duty cycle %. 3. Guaranteed by design, not subject to production testing. www.jscj-elec.com Rev. - 1.0 2