JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220BK Plastic-Encapsulate T hyristors 4Q TRIACs CT408B MAIN CHARACTERISTICS TO-220BK I T(RMS) 8A 600V CT408B-600S/C V /V DRM RRM 800V CT408B-800S/C 1.MAIN TERMINAL 1 V 1.55V TM 2.MAIN TERMINAL 2 3.GATE FEATURES NPNPN 5-layer Structure TRIACs Mesa Glass Passivated Technology Multi Layers Metal Electrodes High Junction Temperature Good Commutation Performance APPLICATIONS MARKING Heater Control CT408B:Series Code Motor Speed Controller 600S:Depends on VDRM Mixer and IGT XXX:Internal Code ABSOLUTE RATINGS ( T =25 unless otherwise noted ) a Symbol Parameter Test condition Value Unit CT408B-600 S/C 600 Repetitive peak off- V V / V DRM RRM Tj=25 state voltage V CT408B-800 S/C 800 I RMS on-state current 8 A T(RMS) TO-220B K(T 110)Fig. 1,2 C Non repetitive surge Full sine waveT (init)=25, j I 80 A TSM peak on-state current tp=20ms Fig. 3,5 2 2 2 I t I t value tp=10ms 36 A s Critical rate of rise of I =2*I , tr10ns, F=120H , G GT Z -- 50 dI /dt A/s T T =125 on-state current j 10 I Peak gate current 2 A GM tp=20s, T =125 j P Average gate power T =125 0.5 W G(AV) j -40~+150 T Storage temperature STG Operating junction T j -40~+125 temperature www.jscj-elec.com 1 Rev. - 1.0ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Value Symbol Parameter Test condition Unit S C V =12V, D 8 20 -- I Gate trigger current mA GT I =1A, T 10 35 T =25, j V Gate trigger voltage -- - 1.3 V GT Fig. 6 Non-triggering gate V 0.2 V GD V =V , T =125 D DRM j voltage V =12V, D I Holding current -- - 10 20 mA H I =0.1A, GT - - 15 25 mA T =25, j Latching current I L 20 35 mA Fig. 6 V =67%V , Gate Critical rate of rise D DRM dV /dt 10 20 V/s D Open T =125 of off-state j I =10Atp=380s , TM V 1.55 V TM On-state Voltage Fig. 4 V =V /V , T =25 5 5 A D DRM RRM j Repetitive peak off- I / I DRM RRM state current V =V /V ,T =125 1 1 mA D DRM RRM j THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) Junction to case (AC) 1.6 /W TO-220B K Rth (j-a) Junction to ambient TO-220B K 60 /W PART NUMBER B CT 4 08 -600 C TRIACs I I 8mA , GT410mA SGT1-3 I I GT435mA C 20mA GT1-3 4 Quadrant Repetitive peak off-state voltage 600 600V I =8A T(RMS) 800 800V Package Type www.jscj-elec.com 2 Rev. - 1.0