AUTOMOTIVE GRADE AUIRFP064N Features V 55V (BR)DSS Advanced Planar Technology Ultra Low On-Resistance R max. 0.008 DS(on) Dynamic dv/dt Rating 175C Operating Temperature I 110A Fast Switching D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S Description D G Specifically designed for Automotive applications, this Cellular TO-247AC design of HEXFET Power MOSFETs utilizes the latest AUIRFP064N processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and G D S ruggedized device design that HEXFET power MOSFETs are Gate Drain Source well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFP064N TO-247AC Tube 25 AUIRFP064N Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 110 D C GS I T = 100C Continuous Drain Current, V 10V 80 A D C GS I Pulsed Drain Current 390 DM P T = 25C Maximum Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 480 AS mJ I Avalanche Current 59 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.75 R JC Case-to-Sink, Flat, Greased Surface 0.24 R C/W CS R Junction-to-Ambient 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-15 AUIRFP064N Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.008 V = 10V, I = 59A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 42 S V = 25V, I = 59A DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 170 I = 59A g D Q Gate-to-Source Charge 32 nC V = 44V gs DS Q Gate-to-Drain Charge 74 V = 10V, See Fig.6 and 13 gd GS t Turn-On Delay Time 14 V = 28V d(on) DD t Rise Time 100 I = 59A r D ns t Turn-Off Delay Time 43 R = 2.5 d(off) G t Fall Time 70 R = 0.39 See Fig.10 f D Between lead, L Internal Drain Inductance 5.0 D 6mm (0.25in.) from package L Internal Source Inductance 13 S and center of die contact pF C Input Capacitance 4000 V = 0V iss GS C Output Capacitance 1300 V = 25V oss DS C Reverse Transfer Capacitance 480 = 1.0MHz, See Fig.5 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 110 S (Body Diode) showing the A Pulsed Source Current integral reverse I 390 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 59A,V = 0V SD J S GS t Reverse Recovery Time 110 170 ns T = 25C ,I = 59A rr J F Q Reverse Recovery Charge 450 680 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11). V = 25V, T = 25C, L = 190H, R = 25, I = 59A.(See fig. 12). DD J G AS I 59A, di/dt 290A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature for recommended current-handling of the package refer to Design Tip 93-4 2 2017-09-15