X-On Electronics has gained recognition as a prominent supplier of IPZA60R037P7XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPZA60R037P7XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPZA60R037P7XKSA1 Infineon

IPZA60R037P7XKSA1 electronic component of Infineon
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Part No.IPZA60R037P7XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
Datasheet: IPZA60R037P7XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.823 ea
Line Total: USD 9.82 
Availability - 64
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
64
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 9.823
25 : USD 6.446
100 : USD 6.193
240 : USD 6.182
480 : USD 5.995

   
Manufacturer
Product Category
Technology
Mounting
Case
Kind Of Package
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate Charge
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the IPZA60R037P7XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPZA60R037P7XKSA1 and other electronic components in the MOSFETs category and beyond.

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IPZA60R037P7 MOSFET PG-TO 247-4-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease 1 2 3 4 of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler. Features Drain Pin 1 Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness Significant reduction of switching and conduction losses Gate Pin 4 Excellent ESD robustness >2kV (HBM) for all products Driver Source Better RDS(on)/package products compared to competition enabled by a Power Pin 3 Source low R *A (below 1Ohm*mm) DS(on) Pin 2 Benefits Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages Simplified thermal management due to low switching and conduction losses Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due to >2 kV ESD protection Suitable for a wide variety of applications and power ranges Potential applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V R 37 m DS(on),max Q 121 nC g,typ I 280 A D,pulse E 400V 12.4 J oss Body diode di /dt 900 A/s F Type / Ordering Code Package Marking Related Links IPZA60R037P7 PG-TO 247-4-3 60R037P7 see Appendix A Final Data Sheet 1 Rev. 2.0, 2017-11-24600V CoolMOS P7 Power Transistor IPZA60R037P7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.0, 2017-11-24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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