SIR-320ST3F ROHM

SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. z Dimensions (Unit : mm) z Applications Optical control equipment 3.80.3 Light source for remote control devices 3.10.2 Notes: 1. Unspecified tolerance shall be 0.2. 2. Dimension in parenthesis are show for reference. z Features 40.6 1) Compact (3.1mm). 2) High efficiency, high output PO=9.0mW (IF=50mA). 3) Wide radiation angle =18deg. 4) Emission spectrum well suited to silicon detectors 2 0.5 (P=940nm). 2 5) Good current-optical output linearity. 1 6) Long life, high reliability. (2.5) 1Anode 2Cathode z Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Forward current IF 75 mA Reverse voltage VR 5 V Power dissipation 100 mW PD Pulse forward current IFP 0.5 A Operating temperature Topr 25 to +85 C Storage temperature Tstg 40 to +85 C Pulse width=0.1msec, duty ratio 1% Rev.B 1/3 20.2 2.51 Max.1 1.1 Min.24 5.20.3SIR-320ST3F Sensors z Electrical and optical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Optical output PO 9 mW IF=50mA Emitting strength IE 5.6 mW/sr IF=50mA Forward voltage VF 1.2 1.5 V IF=50mA IR 10 A VR=3V Reverse current P 940 nm IF=50mA Peak light emitting wavelength 40 nm IF=50mA Spectral line half width 1 / 2 18 deg IF=50mA Half-viewing angle trtf 1.0 s IF=50mA Pesponse time fC 1.0 MHz IF=50mA Cut-off frequency z Electrical and optical characteristic curves 100 25C 100 100 0C 80 25C 80 80 50C 60 75C 60 60 40 40 40 20 20 20 0 0 0 01 2 850 900 950 1000 1050 20 0 20 40 60 80 100 FORWARD VOLTAGE : VF (V) OPTICAL WAVELENGTH : (nm) AMBIENT TEMPERATURE : Ta (C) Fig.2 Forward current vs. forward voltage Fig.3 Wavelength FIg.1 Forward current falloff 50 200 40 100 30 50 20 20 10 10 0 20 0 20 40 60 80 100 0 20 406080 100 AMBIENT TEMPERATURE : Ta (C) FORWARD CURRENT : IF (mA) Fig.5 Radiant intensity vs. Fig.4 Emitting strength vs. ambient temperature forward current Rev.B 2/3 FORWARD CURRENT : IF (mA) EMITTING STRENGTH : IE (mW/sr) FORWARD CURRENT : IF (mA) RELATIVE EMITTING STRENGTH : IE (%) RELATIVE OPTICAL OUTPUT : PO (%)