RTR030P02FHATL ROHM

0~0.1 RTR030P02FHA RTR030P2 Transistors AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTR030P02 RTR030P02FHA z External dimensions (Unit : mm) z Structure Silicon P-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.7 0.4 (3) z Features 1) Low On-resistance. ( ) ( ) 1 2 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : TV (3) Drain z Application Power switching, DC / DC converter. z Packaging specifications z Equivalent circuit Package Taping (3) Type Code TL Basic ordering unit (pieces) 3000 RRTR030P02TR030P02FHA (1) 2 1 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE Drain-source voltage VDSS 20 V (3) Drain 2 BODY DIODE Gate-source voltage V 12 V GSS Continuous ID 3.0 A Drain current 1 Pulsed IDP 12 A Source current Continuous I 0.8 A S 1 (Body diode) Pulsed ISP 3.2 A 2 Total power dissipation PD 1.0 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle 1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 125 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RTR030P02FHA RTR030P02 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =12V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 20 VID=1mA, VGS=0V Zero gate voltage drain current IDSS 1 AV DS=20V, VGS=0V Gate threshold voltage V 0.7 2.0 V V =10V, I =1mA GS (th) DS D 55 75 m ID=3.0A, VGS=4.5V Static drain-source on-state RDS (on) 60 85 m ID=3.0A, VGS=4.0V resistance 90 125 m ID=1.5A, VGS=2.5V Forward transfer admittance Y 2.5 SV =10V, I =1.5A fs DS D Input capacitance Ciss 840 pF VDS=10V Output capacitance Coss 140 pF VGS=0V Reverse transfer capacitance C 100 pF f=1MHz rss td (on) Turn-on delay time 12 ns ID=1.5A VDD 15V tr Rise time 20 ns VGS=4.5V td (off) Turn-off delay time 50 ns RL=10 tf Fall time 20 ns RG=10 Total gate charge Qg 9.3 nC VDD 15V Gate-source charge Qgs 1.6 nC VGS=4.5V Gate-drain charge Q 2.6 nC I =3.0A gd D Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V 1.2 V I =0.8A, V =0V SD S GS Rev.A 2/4