X-On Electronics has gained recognition as a prominent supplier of SI5403DC-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5403DC-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5403DC-T1-GE3 Vishay

SI5403DC-T1-GE3 electronic component of Vishay
SI5403DC-T1-GE3 Vishay
SI5403DC-T1-GE3 MOSFETs
SI5403DC-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI5403DC-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 6.0A 6.3W 30mohm @ 10V
Datasheet: SI5403DC-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9088 ea
Line Total: USD 0.91 
Availability - 35114
Ship by Tue. 22 Apr to Thu. 24 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2303
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 72
Multiples : 1
72 : USD 0.9012
73 : USD 0.8927
74 : USD 0.8843
100 : USD 0.8757
250 : USD 0.8672
500 : USD 0.8256
1000 : USD 0.8175

2910
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.7778

2910
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.5265
6000 : USD 0.52
9000 : USD 0.507

2141
Ship by Thu. 01 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.9459
10 : USD 0.8556
30 : USD 0.6966
100 : USD 0.5922
500 : USD 0.5721
1000 : USD 0.5611

35114
Ship by Tue. 22 Apr to Thu. 24 Apr
MOQ : 1
Multiples : 1
1 : USD 0.9088
10 : USD 0.7213
25 : USD 0.6912
100 : USD 0.5412
250 : USD 0.5401
500 : USD 0.4829
1000 : USD 0.4345
3000 : USD 0.429

2910
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.4762

2303
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 73
Multiples : 1
73 : USD 0.8927
74 : USD 0.8843
100 : USD 0.8757
250 : USD 0.8672
500 : USD 0.8256
1000 : USD 0.8175

2910
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.8761

2910
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.7778

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI5403DC-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5403DC-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI5403DC-T1-GE3 is a 30V, 6.0A, 6.3W, 30mohm MOSFET, made by Vishay. It is a single N-channel, control FET transistor, designed specifically for used in PFC (Power Factor Correction) and other demanding applications. It features a low-input capacitance, low on-resistance and low leakage current, along with excellent gate charge and reverse transfer characteristics. It is rated to tolerate a minimum drain-source voltage of 30V, which makes it ideal for switching and regulating power supplies. It can deliver up to 6.0A of continuous current and 6.3W of power dissipation. Its on-resistance is 30mohm at 10V drain-source voltage.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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