New Product Si5406CDC Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET 0.020 at V = 4.5 V 6 GS RoHS 0.023 at V = 2.5 V 12 6 11.5 nC GS COMPLIANT APPLICATIONS 0.027 at V = 1.8 V 6 GS Load/Power Switching for Cell Phones and Pagers PA Switch in Cellular Devices 1206-8 ChipFET Battery Operated Systems 1 D D D D D D Marking Code D G G AH XXX S Lot Traceability and Date Code Part Code Bottom View S Ordering Information: Si5406CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 12 DS V V Gate-Source Voltage 8 GS a T = 25 C 6 C a T = 85 C 6 C Continuous Drain Current (T = 150 C) I J D a,b, c T = 25 C A 6 a,b, c T = 85 C A 6 A I Pulsed Drain Current 20 DM T = 25 C 4.8 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.9 A T = 25 C 5.7 C T = 85 C 3.0 C Maximum Power Dissipation P W D b, c T = 25 C 2.3 A b, c T = 85 C 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R Maximum Junction-to-Ambient 45 55 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product Si5406CDC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Ma.xUnit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 15 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 85 C 5 DS GS J a I V 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 6.5 A 0.016 0.020 GS D a R V = 2.5 V, I = 6.1 A 0.018 0.023 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 3.7 A 0.021 0.027 GS D a g V = 4 V, I = 6.5 A 30 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1100 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 290 pF oss DS GS C Reverse Transfer Capacitance 150 rss V = 6 V, V = 8 V, I = 8.6 A 21 32 DS GS D Q Total Gate Charge g 11.5 18 nC Q Gate-Source Charge V = 6 V, V = 4.5 V, I = 8.6 A 1 gs DS GS D Q Gate-Drain Charge 2 gd R Gate Resistance f = 1 MHz 2.2 g t Turn-On Delay Time 10 20 d(on) t Rise Time V = 6 V, R = 0.9 10 15 r DD L I 6.9 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 45 70 D GEN g d(off) t Fall Time 20 30 f ns Turn-On Delay Time t 10 15 d(on) t Rise Time V = 6 V, R = 0.9 10 15 r DD L I 6.9 A, V = 8 V, R = 1 Turn-Off Delay Time t 25 40 D GEN g d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I 4.8 S C A I Pulse Diode Forward Current 20 SM V I = 6.9 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 40 ns rr Q Body Diode Reverse Recovery Charge 10 20 nC rr I = 6.9 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68609 2 S-80795-Rev. A, 14-Apr-08