X-On Electronics has gained recognition as a prominent supplier of SI4966DY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4966DY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4966DY-T1-E3 Vishay

SI4966DY-T1-E3 electronic component of Vishay

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Part No.	SI4966DY-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 20V 7.1A 2W Small signal schottky diode with 1.0A forward current and 40V reverse voltage.
Datasheet:	SI4966DY-T1-E3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2500: USD 0.9132 ea
Line Total: USD 2283

Availability - 0

MOQ: 2500 Multiples: 2500
Pack Size: 2500

SI4966DY-T1-E3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 2500 Multiples : 2500	2500 : USD 1.0291

0 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 1 Multiples : 1	1 : USD 2.4345 10 : USD 2.1983 100 : USD 1.7666 500 : USD 1.374 1000 : USD 1.1385

0 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 2500 Multiples : 2500	2500 : USD 0.9132

We are delighted to provide the SI4966DY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4966DY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4966DY-T1-E3 is a Surface Mount N-Channel Enhancement Mode Power MOSFET transistor from the Si49xx family of N-Channel FETs manufactured by Vishay Semiconductors. The device has a maximum drain-source voltage rating of 20 Volts, a maximum drain current rating of 24 Amps, and a maximum power dissipation rating of 10 Watts. The FET also has a gate threshold voltage of 1.7 Volts and an on-resistance of 36 mO. This device is RoHS- and halogen-free compliant and is suitable for use in switching applications and as an amplifier.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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BC may also be referenced as

BC COMPONENTS
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BCC
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SILICONIX
SILICONIX (VISHAY)
SIX
SPD
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SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
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Vishay / BC Components
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Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
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Vishay Semiconductor Diodes Division
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Vishay Semiconductors
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VishayBC Components
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VishaySprague
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VSC
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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 7.1 A 7.1 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 25 mOhms 25 mOhms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 12 V 12 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2 W 2 W
Mounting Style smd/smt smd/smt
Package / Case SOIC - 8 Narrow SOIC - 8 Narrow
Packaging Reel Reel
Channel Mode enhancement enhancement
Configuration dual dual
Brand Vishay Semiconductors Vishay Semiconductors
Fall Time 40 ns 40 ns
Rise Time 40 ns 40 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 90 ns 90 ns