Si5406DC Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.020 at V = 4.5 V 9.5 GS TrenchFET Power MOSFETs: 2.5 V Rated 12 0.025 at V = 2.5 V 8.5 GS Low Thermal Resistance APPLICATIONS Load/Power Switching for Cell Phones and Pagers 1206-8 ChipFET PA Switch in Cellular Devices Battery Operated Systems D 1 D D D D D D G Marking Code G S AC XXX Lot Traceability and Date Code Part Code Bottom View S Ordering Information: Si5406DC-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si5406DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 12 DS V Gate-Source Voltage V 8 GS T = 25 C 9.5 6.9 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 6.8 4.9 A A I Pulsed Drain Current 20 DM a I 2.1 1.1 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.3 A a P W Maximum Power Dissipation D T = 85 C 1.3 0.7 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 40 50 a R Maximum Junction-to-Ambient thJA Steady State 80 95 C/W R Maximum Junction-to-Foot (Drain) Steady State 15 20 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71657 www.vishay.com S09-0129-Rev. C, 02-Feb-09 1Si5406DC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 1.2 mA Gate Threshold Voltage 0.6 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 9.6 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 9.6 V, V = 0 V, T = 85 C 5 DS GS J a I V 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 6.9 A 0.017 0.020 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 2 A 0.021 0.025 GS D a g V = 10 V, I = 6.9 A 30 S Forward Transconductance fs DS D a V I = 1.1 A, V = 0 V 0.7 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 13.7 20 g Q V = 6 V, V = 4.5 V, I = 6.9 A Gate-Source Charge 2.3 nC gs DS GS D Gate-Drain Charge Q 4.1 gd t Turn-On Delay Time 17 25 d(on) Rise Time t 46 70 V = 6 V, R = 6 r DD L I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 54 80 ns d(off) Fall Time t 29 45 f t I = 1.1 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 35 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 5 thru 2.5 V GS 2V 16 15 12 10 8 T = 125 C C 5 4 25 C 1V 1.5 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71657 2 S09-0129-Rev. C, 02-Feb-09 I - Drain Current (A) D I - Drain Current (A) D