X-On Electronics has gained recognition as a prominent supplier of SI5406DC-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5406DC-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5406DC-T1-GE3 Vishay

SI5406DC-T1-GE3 electronic component of Vishay
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Part No.SI5406DC-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 12V 9.5A 2.5W 20mohm @ 4.5V
Datasheet: SI5406DC-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.4247 ea
Line Total: USD 4274.1 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 1
3000 : USD 1.4247
15000 : USD 1.1285
30000 : USD 0.9836

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the SI5406DC-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5406DC-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si5406DC Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.020 at V = 4.5 V 9.5 GS TrenchFET Power MOSFETs: 2.5 V Rated 12 0.025 at V = 2.5 V 8.5 GS Low Thermal Resistance APPLICATIONS Load/Power Switching for Cell Phones and Pagers 1206-8 ChipFET PA Switch in Cellular Devices Battery Operated Systems D 1 D D D D D D G Marking Code G S AC XXX Lot Traceability and Date Code Part Code Bottom View S Ordering Information: Si5406DC-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si5406DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 12 DS V Gate-Source Voltage V 8 GS T = 25 C 9.5 6.9 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 6.8 4.9 A A I Pulsed Drain Current 20 DM a I 2.1 1.1 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.3 A a P W Maximum Power Dissipation D T = 85 C 1.3 0.7 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 40 50 a R Maximum Junction-to-Ambient thJA Steady State 80 95 C/W R Maximum Junction-to-Foot (Drain) Steady State 15 20 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71657 www.vishay.com S09-0129-Rev. C, 02-Feb-09 1Si5406DC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 1.2 mA Gate Threshold Voltage 0.6 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 9.6 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 9.6 V, V = 0 V, T = 85 C 5 DS GS J a I V 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 6.9 A 0.017 0.020 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 2 A 0.021 0.025 GS D a g V = 10 V, I = 6.9 A 30 S Forward Transconductance fs DS D a V I = 1.1 A, V = 0 V 0.7 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 13.7 20 g Q V = 6 V, V = 4.5 V, I = 6.9 A Gate-Source Charge 2.3 nC gs DS GS D Gate-Drain Charge Q 4.1 gd t Turn-On Delay Time 17 25 d(on) Rise Time t 46 70 V = 6 V, R = 6 r DD L I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 54 80 ns d(off) Fall Time t 29 45 f t I = 1.1 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 35 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 5 thru 2.5 V GS 2V 16 15 12 10 8 T = 125 C C 5 4 25 C 1V 1.5 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71657 2 S09-0129-Rev. C, 02-Feb-09 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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