HP8M51 Datasheet 100V Nch+Pch Power MOSFET llOutline Tr1:Nch Tr2:Pch Symbol V 100V -100V DSS HSOP8 R (Max.) 170m 290m DS(on) I 4.5A 4.5A D P 7.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB1 Marking HP8M51 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 100 -100 V DSS *1 I Continuous drain current 4.5 4.5 A D *2 I Pulsed drain current 18 18 A DP V Gate - Source voltage 20 20 V GSS *3 I Avalanche current, single pulse 4.5 -4.5 A AS *3 E Avalanche energy, single pulse 2.9 14.7 mJ AS *1 P 7.0 D Power dissipation total W *4 P 3.0 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. HP8M51 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. Tr1 V = 0V, I = 1mA 100 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -100 - - GS D V I = 1mA, referenced to 25 (BR)DSS Tr1 D - 116.9 - Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 - -91.3 - D Tr1 V = 100V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -100V, V = 0V - - -1 DS GS Tr1 V = 20V, VDS = 0V - - 10 GS Gate - Source I A GSS leakage current Tr2 V = 20V, VDS = 0V - - 10 GS Tr1 V = 10V, I = 1mA 1.0 - 2.5 DS D Gate threshold V V GS(th) voltage Tr2 V = -10V, I = -1mA -1.0 - -2.5 DS D V I = 1mA, referenced to 25 Tr1 D - -3.6 - GS(th) Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 D - 3.0 - V = 10V, I = 4.5A - 120 170 GS D Tr1 V = 4.5V, I = 4.5A - 130 180 GS D Static drain - source *5 R m DS(on) on - state resistance V = -10V, I = -4.5A - 210 290 GS D Tr2 V = -4.5V, I = -4.5A - 230 320 GS D Tr1 - 7.0 - R Gate resistance f=1MHz, open drain G Tr2 - 6.8 - Tr1 V = 10V, I = 4.5A 3.5 - - DS D Forward Transfer *5 Y S fs Admittance Tr2 V = -10V, I = -4.5A 3.5 - - DS D *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Tr1: L 0.20mH, V = 50V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j Tr2: L 1.00mH, V = -50V, R = 25, Starting T = 25 Fig.6-1,6-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/19 20190527 - Rev.003