HP8KA1TB ROHM

HP8KA1 Datasheet 30V Nch+Nch Power MOSFET llOutline V 30V DSS R (Max.) 5.0m DS(on) HSOP8 I 14A D P 3W D llInner circuit llFeatures 1) Low on - resistance 2) Pb-free plating RoHS compliant 3) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Load Switch Quantity (pcs) 2500 LiB charging and discharging switch Taping code TB Marking HP8KA1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 I Continuous drain current 14 A D *2 I Pulsed drain current 28 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 3 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20200305 - Rev.004 HP8KA1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 41 /W thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T referenced to j Zero gate voltage I V = 24V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = 10V, I = 10mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to j V = 10V, I = 14A - 3.5 5.0 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 14A - 5.0 7.0 GS D Forward Transfer *4 Y V = 5V, I = 14A 14 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2/11 20200305 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.