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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power 26 A, 60 V. R = 0.05 V = 5 V DS(ON) GS field effect transistors are produced using Fairchild s R = 0.035 V = 10 V. DS(ON) GS proprietary, high cell density, DMOS technology. This Critical DC electrical parameters specified at elevated very high density process has been especially tailored temperature. to minimize on-state resistance, provide superior switching performance, and withstand high energy Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage 175C maximum junction temperature rating. applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered High density cell design for extremely low R . DS(ON) circuits where fast switching, low in-line power loss, 2 TO-220 and TO-263 (D PAK) package for both through hole and resistance to transients are needed. and surface mount applications. D G S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter NDP5060L NDB5060L Units V Drain-Source Voltage 60 V DSS 60 V V Drain-Gate Voltage (R < 1 M) DGR GS V Gate-Source Voltage - Continuous 16 V GSS 25 - Nonrepetitive (t < 50 s) P I Drain Current - Continuous 26 A D - Pulsed 78 P Total Power Dissipation T = 25C 68 W D C Derate above 25C 0.45 W/C T ,T Operating and Storage Temperature Range -65 to 175 C J STG 1997 Fairchild Semiconductor Corporation NDP5060L Rev.A