Product Information

BF998E6327HTSA1

BF998E6327HTSA1 electronic component of Infineon

Datasheet
RF MOSFET Transistors N-CH 12 V 30 mA

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1358 ea
Line Total: USD 0.14

4 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.1358

3681 - WHS 2


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 5
Multiples : 5
5 : USD 0.2795
50 : USD 0.2245
150 : USD 0.201
500 : USD 0.1716
3000 : USD 0.1585
6000 : USD 0.1506

     
Manufacturer
Product Category
Technology
Package / Case
Packaging
Series
Type
Brand
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Brand Category
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The Infineon BF998E6327HTSA1 RF MOSFET Transistors is a N-channel Metal Oxide Semiconductor Field Effect Transistor designed for use in switching and amplifier applications. It has a drain to source voltage rating of 12V and a low on-state resistance of 4.9 Ohms. It has a Pd of 600mW and a maximum drain current rating of 30mA. This device is ideal for applications that require a low-noise, low-power and high-current switching element or for amplifying signals. The device also features a low input capacitance of 1.2pF, making it suitable for stable higher frequency operation in high frequency circuit applications. Additionally, the device also has an optimized gate threshold voltage that helps reduce power consumption while operating.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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