IRF3708PbF SMPS MOSFET IRF3708SPbF IRF3708LPbF Applications HEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom V R max I DSS DS(on) D and Industrial Use 30V 12m 62A High Frequency Buck Converters for Computer Processor Power Lead-Free Benefits Ultra-Low Gate Impedance Very Low R at 4.5V V DS(on) GS Fully Characterized Avalanche Voltage 2 TO-220AB D Pak TO-262 IRF3708 and Current IRF3708S IRF3708L Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 30 V DS V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 10V 62 D C GS I T = 70C Continuous Drain Current, V 10V 52 A D C GS I Pulsed Drain Current 248 DM P T = 25C Maximum Power Dissipation 87 W D C P T = 70C Maximum Power Dissipation 61 W D C Linear Derating Factor 0.58 W/C T , T Junction and Storage Temperature Range -55 to + 175 C J STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.73 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB mount) 40 JA When mounted on 1 square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note AN-994 Notes through are on page 10 www.irf.com 1 IRF3708/S/LPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.028 V/C Reference to 25C, I = 1mA (BR)DSS J D 8 12.0 V = 10V, I = 15A GS D R Static Drain-to-Source On-Resistance 9.5 13.5 m V = 4.5V, I = 12A DS(on) GS D 14.5 29 V = 2.8V, I = 7.5A GS D V Gate Threshold Voltage 0.6 2.0 V V = V , I = 250A GS(th) DS GS D 20 V = 24V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 100 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -12V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 49 S V = 15V, I = 50A fs DS D Q Total Gate Charge 24 I = 24.8A g D Q Gate-to-Source Charge 6.7 nC V = 15V gs DS Q Gate-to-Drain Mille) Charge 5.8 V = 4.5V gd GS Q Output Gate Charge 14 21 V = 0V, I = 24.8A, V = 15V oss GS D DS t Turn-On Delay Time 7.2 V = 15V d(on) DD t Rise Time 50 I = 24.8A r D ns t Turn-Off Delay Time 17.6 R = 0.6 d(off) G t Fall Time 3.7 V = 4.5V f GS C Input Capacitance 2417 V = 0V iss GS C Output Capacitance 707 V = 15V oss DS C Reverse Transfer Capacitance 52 pF = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 213 mJ AS I Avalanche Current 62 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 62 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 248 (Body Diode) p-n junction diode. S 0.88 1.3 V T = 25C, I = 31A, V = 0V J S GS V Diode Forward Voltage SD 0.80 T = 125C, I = 31A, V = 0V J S GS t Reverse Recovery Time 41 62 ns T = 25C, I = 31A, V =20V rr J F R Q Reverse Recovery Charge 64 96 nC di/dt = 100A/s rr t Reverse Recovery Time 43 65 ns T = 125C, I = 31A, V =20V rr J F R Q Reverse Recovery Charge 70 105 nC di/dt = 100A/s rr 2 www.irf.com