IRF6609PbF IRF6609TRPbF DirectFET Power MOSFET RoHS Compliant Lead-Free (Qualified up to 260C Reflow) V R max Qg DSS DS(on) Application Specific MOSFETs 2.0m V = 10V 20V 46nC GS Ideal for CPU Core DC-DC Converters 2.6m V = 4.5V GS Low Conduction Losses and Switching Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description TM The IRF6609PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compat- ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6609PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6609PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 20 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V C GS 150 D I T = 25C Continuous Drain Current, V 10V GS 31 A D A I T = 70C Continuous Drain Current, V 10V GS 25 D A Pulsed Drain Current I 250 DM P T = 25C Power Dissipation 89 C D P T = 25C Power Dissipation 1.8 W A D P T = 70C Power Dissipation 2.8 D A Linear Derating Factor 0.022 W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient JA 45 R Junction-to-Ambient JA 12.5 R JA Junction-to-Ambient 20 C/W R Junction-to-Case 1.4 JC R Junction-to-PCB Mounted J-PCB 1.0 Notes through are on page 10 www.irf.com 1 7/3/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 15 mV/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 1.6 2.0 m V = 10V, I = 31A DS(on) GS D 2.0 2.6 V = 4.5V, I = 25A GS D V Gate Threshold Voltage 1.55 2.45 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -6.1 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 150C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 91 S V = 10V, I = 25A DS D Q Total Gate Charge 46 69 g Q Pre-Vth Gate-to-Source Charge 15 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 4.7 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 15 I = 17A gd D Q Gate Charge Overdrive 11 See Fig. 16 godr Q Switch Charge (Q + Q ) 20 sw gs2 gd Q Output Charge 26 nC V = 10V, V = 0V oss DS GS t Turn-On Delay Time 24 V = 16V, V = 4.5V d(on) DD GS t Rise Time 95 I = 25A r D t Turn-Off Delay Time 26 ns Clamped Inductive Load d(off) t Fall Time 9.8 f C Input Capacitance 6290 V = 0V iss GS C Output Capacitance 1850 pF V = 10V oss DS C Reverse Transfer Capacitance 860 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 240 mJ AS (Thermally limited) I Avalanche Current A AR See Fig. 12, 13, 18a, Repetitive Avalanche Energy E 18b, mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 89 MOSFET symbol S (Body Diode) A showing the G Pulsed Source Current 250 I integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.80 1.2 V T = 25C, I = 25A, V = 0V SD J S GS t Reverse Recovery Time 32 48 ns T = 25C, I = 25A rr J F Q Reverse Recovery Charge 26 39 nC di/dt = 100A/s rr 2 www.irf.com