IRF1503SPbF IRF1503LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D V = 30V Benefits DSS Advanced Process Technology Ultra Low On-Resistance R = 3.3m DS(on) G 175C Operating Temperature Fast Switching I = 75A D Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and 2 D Pak TO-262 reliable device for use in a wide variety of applications. IRF1503SPbF IRF1503LPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon limited) 190 D C GS I T = 100C Continuous Drain Current, V 10V (See Fig.9) 130 A D C GS I T = 25C Continuous Drain Current, V 10V (Package limited) 75 D C GS I Pulsed Drain Current 960 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 510 mJ AS E (tested) Single Pulse Avalanche Energy Tested Value 980 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.028 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 2.6 3.3 m V = 10V, I = 140A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 75 S V = 25V, I = 140A fs DS D 20 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 24V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 130 200 I = 140A g D Q Gate-to-Source Charge 36 54 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 41 62 V = 10V gd GS t Turn-On Delay Time 17 V = 15V d(on) DD t Rise Time 130 I = 140A r D ns t Turn-Off Delay Time 59 R = 2.5 d(off) G t Fall Time 48 V = 10V f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 5730 V = 0V iss GS C Output Capacitance 2250 pF V = 25V oss DS C Reverse Transfer Capacitance 290 = 1.0MHz, See Fig. 5 rss C Output Capacitance 7580 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 2290 V = 0V, V = 24V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 3420 V = 0V, V = 0V to 24V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 190 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 960 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 140A, V = 0V SD J S GS t Reverse Recovery Time 71 110 ns T = 25C, I = 140A rr J F Q Reverse RecoveryCharge 110 170 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Starting T = 25C, L = 0.049mH J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax R = 25 , I = 140A. (See Figure 12). G AS avalanche performance. I 140A, di/dt 110A/s, V V , SD DD (BR)DSS T 175C J Pulse width 400s duty cycle 2%. 2 www.irf.com