X-On Electronics has gained recognition as a prominent supplier of SQJ418EP-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJ418EP-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJ418EP-T1_GE3 Vishay

SQJ418EP-T1_GE3 electronic component of Vishay
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Part No.SQJ418EP-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
Datasheet: SQJ418EP-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.254 ea
Line Total: USD 1.25 
Availability - 25868
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6219
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8197
10 : USD 0.722
30 : USD 0.6742
100 : USD 0.6263
500 : USD 0.5956
1000 : USD 0.5822

25868
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.254
10 : USD 0.8987
100 : USD 0.6545
500 : USD 0.5434
1000 : USD 0.5104
3000 : USD 0.4884
6000 : USD 0.4829
9000 : USD 0.4796

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQJ418EP-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ418EP-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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The SQJ418EP-T1_GE3 is a MOSFET N-channel enhancement mode field effect transistor manufactured by Vishay. It is AEC-Q101 qualified and can handle a maximum voltage of 100V across its drain-source (D-S) and 20V between its gate and source (G-S) terminals. The MOSFET has a TO-252DF 3-pin surface mount package and is designed for use in high frequency switching applications such as motor drives and motor controls.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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