X-On Electronics has gained recognition as a prominent supplier of SQJ433EP-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJ433EP-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJ433EP-T1_GE3 Vishay

SQJ433EP-T1_GE3 electronic component of Vishay
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Part No.SQJ433EP-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified
Datasheet: SQJ433EP-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9035 ea
Line Total: USD 1.9 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 1
3000 : USD 0.8416
4000 : USD 0.8332
5000 : USD 0.8249
6000 : USD 0.8167
10000 : USD 0.8085
15000 : USD 0.8004
20000 : USD 0.7923
25000 : USD 0.7844
50000 : USD 0.7766

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9035
10 : USD 1.638
100 : USD 1.2275
500 : USD 0.9744
1000 : USD 0.7692
3000 : USD 0.7176

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQJ433EP-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ433EP-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm SQJ433EP www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) -30 DS 100 % R and UIS tested g R () at V = -10 V 0.0081 DS(on) GS c AEC-Q101 qualified R () at V = -4.5 V 0.0170 DS(on) GS I (A) -75 Material categorization: D for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 Package PowerPAK SO-8L S PowerPAK SO-8L Single G D 1 S 2 S 3 D S 4 P-Channel MOSFET 1 G Top View Bottom View ABSOLUE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -30 DS V Gate-Source Voltage V 20 GS T = 25 C -75 C Continuous Drain Current I D T = 125 C -45 C Continuous Source Current (Diode Conduction) I -75 A S Pulsed Drain Current a I -200 DM Single Pulse Avalanche Current I -40 AS L = 0.1 mH Single Pulse Avalanche Energy E 70 mJ AS T = 25 C 83 C Maximum Power Dissipation a P W D T = 125 C 27 C Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient PCB Mount R 65 thJA C/W Junction-to-Case (Drain) R 1.8 thJC Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR4 material). c. Parametric verification ongoing. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-2147-Rev. A, 14-Sep-15 Document Number: 62917 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.13 mmSQJ433EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -30 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -30 V - - -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -30 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -30 V, T = 175 C - - -150 GS DS J a On-State Drain Current I V = -10 V V 5 V -30 - - A D(on) GS DS V = -10 V I = -16 A - 0.0064 0.0081 GS D V = -4.5 V I = -12 A - 0.0118 0.0170 GS D a Drain-Source On-State Resistance R DS(on) V = -10 V I = -16 A, T = 125 C - 0.0085 - GS D J V = -10 V I = -16 A, T = 175 C - 0.0100 - GS D J b Forward Transconductance g V = -15 V, I = -13.8 A - 40 - S fs DS D b Dynamic Input Capacitance C - 3683 4877 iss Output Capacitance C -V = 0 V V = -15 V, f = 1 MHz7751072 pF oss GS DS Reverse Transfer Capacitance C -561695 rss c Total Gate Charge Q -72 108 g c Gate-Source Charge Q -1V = -10 V V = -15 V, I = -15 A2- nC gs GS DS D c Gate-Drain Charge Q -20- gd Gate Resistance R f = 1 MHz 0.5 1.1 2 g c Turn-On Delay Time t -17 26 d(on) c Rise Time t -21 31 r V = -20 V, R = 15 DD L ns c I -1 A, V = -10 V, R = 6 Turn-Off Delay Time t -7D GEN g9110 d(off) c Fall Time t -4969 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- -200 A SM Forward Voltage V I = -10 A, V = 0 - -0.8 -1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2147-Rev. A, 14-Sep-15 Document Number: 62917 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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