X-On Electronics has gained recognition as a prominent supplier of SQJ204EP-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJ204EP-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJ204EP-T1_GE3 Vishay

SQJ204EP-T1_GE3 electronic component of Vishay
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Part No.SQJ204EP-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 12V Vds -/+12V Vgs PowerPAK SO-8L
Datasheet: SQJ204EP-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6356 ea
Line Total: USD 1.64 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 1
3000 : USD 0.8628
4000 : USD 0.8542
5000 : USD 0.8457
6000 : USD 0.8373
10000 : USD 0.8288
15000 : USD 0.8205
20000 : USD 0.8123
25000 : USD 0.8043
50000 : USD 0.7962

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6356
10 : USD 1.4112
100 : USD 1.0795
500 : USD 0.8851
1000 : USD 0.7188
3000 : USD 0.6804

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQJ204EP-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ204EP-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm6.15 mm SQJ204EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 12 V (D-S) 175 C MOSFETs FEATURES PowerPAK SO-8L Dual Asymmetric TrenchFET power MOSFET AEC-Q101 qualified D 1 100 % R and UIS tested g Optimized for synchronous buck applications D 2 Material categorization: 1 for definitions of compliance please see S 1 2 www.vishay.com/doc 99912 G 1 3 S 2 4 11 G 2 D D Top View Bottom View 1 2 PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 V (V) 12 12 DS G G 1 2 R ( ) at V = 10 V 0.0083 0.0030 DS(on) GS R () at V = 4.5 V 0.0093 0.0035 DS(on) GS R () at V = 3.3 V 0.0103 0.0041 DS(on) GS I (A) 20 60 D S S 1 2 Configuration Dual N-Channel 1 MOSFET N-Channel 2 MOSFET Package PowerPAK SO-8L Dual Asymmetric ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT Drain-source voltage V 12 12 DS V Gate-source voltage V 12 GS a a T = 25 C 20 60 C Continuous drain current I D a T = 125 C 20 51 C a Continuous source current (diode conduction) I 20 44 A S b Pulsed drain current I 80 175 DM Single pulse avalanche current I 25 50 AS L = 0.1 mH Single pulse avalanche energy E 31.2 125 mJ AS T = 25 C 27 48 C b Maximum power dissipation P W D T = 125 C 9 16 C Operating junction and storage temperature range T , T -55 to +175 J stg C d, e Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT c Junction-to-ambient PCB mount R 85 85 thJA C/W Junction-to-case (drain) R 5.5 3.1 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S18-0487-Rev. A, 07-May-2018 Document Number: 76441 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 55.13 mm13 mm SQJ204EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static V = 0 V, I = 250 A N-Ch 1 12 - - GS D Drain-source breakdown voltage V DS V = 0 V, I = 250 A N-Ch 2 12 - - GS D V V = V , I = 250 A N-Ch 1 0.5 1 1.5 DS GS D Gate-source threshold voltage V GS(th) V = V , I = 250 A N-Ch 2 0.5 1 1.5 DS GS D N-Ch 1 - - 100 Gate-source leakage I V = 0 V, V = 20 V nA GSS DS GS N-Ch 2 - - 100 V = 0 V V = 12 V N-Ch 1 - - 1 GS DS V = 0 V V = 12 V N-Ch 2 - - 1 GS DS V = 0 V V = 12 V, T = 125 C N-Ch 1 - - 50 GS DS J Zero gate voltage drain current I A DSS V = 0 V V = 12 V, T = 125 C N-Ch 2 - - 50 GS DS J V = 0 V V = 12 V, T = 175 C N-Ch 1 - - 300 GS DS J V = 0 V V = 12 V, T = 175 C N-Ch 2 - - 300 GS DS J V = 10 V V 5 V N-Ch 1 15 - - GS DS a On-state drain current I A D(on) V = 10 V V 5 V N-Ch 2 30 - - GS DS V = 10 V I = 4 A N-Ch 1 - 0.00675 0.00830 GS D V = 10 V I = 10 A N-Ch 2 - 0.00246 0.00300 GS D V = 10 V I = 4 A, T = 125 C N-Ch 1 - - 0.01250 GS D J V = 10 V I = 10 A, T = 125 C N-Ch 2 - - 0.00470 GS D J V = 10 V I = 4 A, T = 175 C N-Ch 1 - - 0.01460 GS D J a Drain-source on-state resistance R DS(on) V = 10 V I = 10 A, T = 175 C N-Ch 2 - - 0.00560 GS D J V = 4.5 V I = 3 A N-Ch 1 - 0.00755 0.00930 GS D V = 4.5 V I = 8 A N-Ch 2 - 0.00285 0.00350 GS D V = 3.3 V I = 2 A N-Ch 1 - 0.00835 0.01030 GS D V = 3.3 V I = 5 A N-Ch 2 - 0.00335 0.00410 GS D V = 10 V, I = 4 A N-Ch 1 - 38 - DS D b Forward transconductance g S fs V = 10 V, I = 10 A N-Ch 2 - 66 - DS D b Dynamic V = 0 V V = 6 V, f = 1 MHz N-Ch 1 - 995 1400 GS DS Input capacitance C iss V = 0 V V = 6 V, f = 1 MHz N-Ch 2 - 2687 3700 GS DS V = 0 V V = 6 V, f = 1 MHz N-Ch 1 - 469 700 GS DS Output capacitance C pF oss V = 0 V V = 6 V, f = 1 MHz N-Ch 2 - 1240 1700 GS DS V = 0 V V = 6 V, f = 1 MHz N-Ch 1 - 233 400 GS DS Reverse transfer capacitance C rss V = 0 V V = 6 V, f = 1 MHz N-Ch 2 - 619 900 GS DS V = 10 V V = 6 V, I = 2 A N-Ch 1 - 12.3 20 GS DS D c Total gate charge Q g V = 10 V V = 6 V, I = 4 A N-Ch 2 - 32.3 50 GS DS D V = 10 V V = 6 V, I = 2 A N-Ch 1 - 1.8 - GS DS D nC c Gate-source charge Q gs V = 10 V V = 6 V, I = 4 A N-Ch 2 - 4.9 - GS DS D V = 10 V V = 6 V, I = 2 A N-Ch 1 - 2.4 - GS DS D c Gate-drain charge Q gd V = 10 V V = 6 V, I = 4 A N-Ch 2 - 6.6 - GS DS D N-Ch 1 1.05 2.15 3.3 Gate resistance R f = 1 MHz g N-Ch 2 0.4 0.88 1.4 S18-0487-Rev. A, 07-May-2018 Document Number: 76441 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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