X-On Electronics has gained recognition as a prominent supplier of SQJ401EP-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJ401EP-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJ401EP-T1_GE3 Vishay

SQJ401EP-T1_GE3 electronic component of Vishay
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Part No.SQJ401EP-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P-Channel 12V AEC-Q101 Qualified
Datasheet: SQJ401EP-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8975 ea
Line Total: USD 1.9 
Availability - 37285
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
37285
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8975
10 : USD 1.541
100 : USD 1.15
500 : USD 1.0063
1000 : USD 0.9775
3000 : USD 0.9568
6000 : USD 0.9465
9000 : USD 0.9418

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SQJ401EP-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ401EP-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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5.13 mm SQJ401EP www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) - 12 DS Definition R () at V = - 4.5 V 0.0060 DS(on) GS TrenchFET Power MOSFET R () at V = - 2.5 V 0.0080 DS(on) GS d AEC-Q101 Qualified I (A) - 32 D 100 % R and UIS Tested g Configuration Single Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8L Single S G D 4 G 3 S 2 D S 1 P-Channel MOSFET S ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ401EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 12 DS V Gate-Source Voltage V 8 GS T = 25 C - 32 C a Continuous Drain Current I D T = 125 C - 32 C a Continuous Source Current (Diode Conduction) I - 32 A S b Pulsed Drain Current I - 120 DM Single Pulse Avalanche Current I - 30 AS L = 0.1 mH Single Pulse Avalanche Energy E 45 mJ AS T = 25 C 83 C b Maximum Power Dissipation P W D T = 125 C 27 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C e, f Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 65 thJA C/W Junction-to-Case (Drain) R 1.8 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. e. See Solder Profile (www.vishay.com/doc 73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-1396-Rev. A, 18-Jul-11 Document Number: 67063 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 6.15 mm SQJ401EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 12 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.45 - 0.6 - 1.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 0 V V = - 12 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 12 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 12 V, T = 175 C - - - 250 GS DS J a On-State Drain Current I V = - 4.5 V V - 5 V - 30 - - A D(on) GS DS V = - 4.5 V I = - 15 A - 0.0050 0.0060 GS D V = - 4.5 V I = - 15 A, T = 125 C - - 0.0073 GS D J a Drain-Source On-State Resistance R DS(on) V = - 4.5 V I = - 15 A, T = 175 C - - 0.0080 GS D J V = - 2.5 V I = - 15 A - 0.0065 0.0080 GS D b Forward Transconductance g V = - 15 V, I = - 15 A - 60 - S fs DS D b Dynamic Input Capacitance C - 8012 10 015 iss Output Capacitance C -V = 0 V V = - 6 V, f = 1 MHz38084760 pF oss GS DS Reverse Transfer Capacitance C -33204150 rss c Total Gate Charge Q - 109 164 g c Gate-Source Charge Q -1V = - 4.5 V V = - 6 V, I = - 8.9 A1- nC gs GS DS D c Gate-Drain Charge Q -29- gd Gate Resistance R f = 1 MHz 1.8 3.7 5.6 g c Turn-On Delay Time t -43 65 d(on) c Rise Time t -63 95 r V = - 6 V, R = 6 DD L ns c I - 1 A, V = - 4.5 V, R = 1 D GEN g Turn-Off Delay Time t -263395 d(off) c Fall Time t -166250 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - - 120 A SM Forward Voltage V I = - 25 A, V = 0 - - 0.8 - 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1396-Rev. A, 18-Jul-11 Document Number: 67063 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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