X-On Electronics has gained recognition as a prominent supplier of STB4NK60ZT4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB4NK60ZT4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB4NK60ZT4 STMicroelectronics

STB4NK60ZT4 electronic component of STMicroelectronics
STB4NK60ZT4 STMicroelectronics
STB4NK60ZT4 MOSFETs
STB4NK60ZT4  Semiconductors

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See Product Specifications
Part No. STB4NK60ZT4
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; D2PAK
Datasheet: STB4NK60ZT4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.7914 ea
Line Total: USD 791.4 
Availability - 970
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
2
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 1.6124
10 : USD 1.5748
30 : USD 1.5503
100 : USD 1.3865

2910
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.8305
10000 : USD 0.8223

970
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.7914
10000 : USD 0.7837

953
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 75
Multiples : 1
75 : USD 0.8666
76 : USD 0.8578
100 : USD 0.8268
250 : USD 0.813
500 : USD 0.7993

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the STB4NK60ZT4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB4NK60ZT4 and other electronic components in the MOSFETs category and beyond.

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STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4 Datasheet N-channel 600 V, 1.7 typ., 4 A SuperMESH Power MOSFETs 2 2 in I PAK, D PAK, IPAK and DPAK packages Features TAB TAB Order codes V R max. P I DS DS(on) TOT D 3 1 3 2 2 STB4NK60Z-1 2 1 D PAK I PAK STB4NK60ZT4 600 V 2 70 W 4 A TAB TAB STD4NK60Z-1 3 2 3 1 2 STD4NK60ZT4 1 DPAK IPAK Extremely high dv/dt capability 100% avalanche tested D(2, TAB) Gate charge minimized Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 STD4NK60ZT4 DS2818 - Rev 9 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB4NK60Z-1, STB4NK60ZT4, STD4NK60Z-1, STD4NK60ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 600 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 4 A D C I Drain current (continuous) at T = 100 C 2.5 A D C (1) I Drain current (pulsed) 16 A DM P Total dissipation at T = 25 C 70 W TOT C ESD Gate-source human body model (C=100 pF, R=1.5 k) 3 kV (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 4 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 2 IPAK, DPAK I PAK, D PAK R Thermal resistance junction- case 1.79 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T max) 4 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 120 mJ AS j D AR DD DS2818 - Rev 9 page 2/32

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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