STB5N62K3 STMicroelectronics

STB5N62K3, STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 N-channel 620 V, 1.28 , 4.2 A SuperMESH3 Power MOSFET DPAK, DPAK,TO-220FP, TO-220 and IPAK Features R DS(on) Order codes V I P DSS D w max. 3 3 3 2 2 1 STB5N62K3 1 1 70 W STD5N62K3 DPAK TO-220 TO-220FP STF5N62K3 620 V < 1.6 4.2 A 25 W STP5N62K3 70 W STU5N62K3 3 3 2 100% avalanche tested 1 1 IPAK Extremely large avalanche performance DPAK Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram Application D(2) Switching applications Description G(1) These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics SuperMESH technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and S(3) AM01476v1 high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes Marking Packages Packaging STB5N62K3 DPAK Tape and reel STD5N62K3 DPAK Tape and reel STF5N62K3 5N62K3 TO-220FP Tube STP5N62K3 TO-220 Tube STU5N62K3 IPAK Tube October 2010 Doc ID 17361 Rev 2 1/19 www.st.com 19 Contents STB/D/F/P/U5N62K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Package mechanical data 16 6 Revision history . 18 2/19 Doc ID 17361 Rev 2