ADVANCED LINEAR DEVICES, INC. ALD1115 COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1115 is a monolithic complementary N-channel and P-channel Precision current mirrors transistor pair intended for a broad range of analog applications. These Complementary push-pull linear drives enhancement-mode transistors are manufactured with Advanced Linear Discrete analog switches Devices enhanced ACMOS silicon gate CMOS process. It consists of a Analog signal choppers N-channel MOSFET and a P-channel MOSFET in one package. The Differential amplifier input stage ALD1115 is a dual version of the quad complementary ALD1105. Voltage comparator Data converters The ALD1115 offers high input impedance and negative current tempera- Sample and Hold ture coefficient. The transistor pair is designed for precision signal Analog current inverter switching and amplifying applications in +1V to +10V systems where low Precision matched current sources input bias current, low input capacitance and fast switching speed are CMOS inverter stage desired. Since these are MOSFET devices, they feature very large Diode clamps (almost infinite) current gain in a low frequency, or near DC, operating Source followers environment. When connected in parallel with sources, drains and gates connected together, a CMOS analog switch can be constructed. In PIN CONFIGURATION addition, the ALD1115 is intended as a building block for CMOS inverters, differential amplifier input stages, transmission gates, and multiplexer applications. + 1 SN 8 V The ALD1115 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. GN 2 7 DP The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. 3 6 The DC current gain is limited by the gate input leakage current, which is DN GP specified at 100pA at room temperature. V+ is connected to the substrate, - V 4 5 SP which is the most positive voltage potential of the ALD1115, usually SP (5). Similarly, V- is connected to the most negative voltage potential of the ALD1115, usually SN (1). TOP VIEW SAL, PAL PACKAGES FEATURES Thermal tracking between N-channel and P-channel BLOCK DIAGRAM Low threshold voltage of 0.7V for both N-channel and P-channel MOSFETs Low input capacitance 13 High input impedance -- 10 typical GN (2) Low input and output leakage currents Negative current (I ) temperature coefficient DS Enhancement-mode (normally off) 9 DN (3) SN (1) DC current gain 10 Single N-channel MOSFET and single P-channel - V (4) MOSFET in one package ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) Operating Temperature Range* GP (6) 0C to +70C0C to +70C 8-Pin 8-Pin SP (5) DP (7) SOIC Plastic Dip Package Package + V (8) ALD1115SAL ALD1115PAL * Contact factory for high temperature versions. 2021 Advanced Linear Devices, Inc., Vers. 2.2 www.aldinc.com 1 of 8ABSOLUTE MAXIMUM RATINGS Drain-source voltage, V 10V DS Gate-source voltage, V 10V GS Power dissipation 500mW Operating temperature range SAL, PAL packages 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS T = 25C unless otherwise specified A N - Channel Test P - Channel Test Parameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit Conditions Gate Threshold V 0.4 0.7 1.0 V I = 1A V = V -0.4 -0.7 -1.2 V I = -1A V = V T DS GS DS DS GS DS Voltage Gate Threshold Temperature TC -1.2 mV/C -1.3 mV/C VT Drift On Drain I 3 4.8 mA V = V = 5V -1.3 -2 mA V = V = -5V DS (ON) GS DS GS DS Current Trans-. G 1 1.8 mmho V = 5V I = 10mA 0.25 0.67 mmho V = -5V I = -10mA fs DS DS DS DS conductance Output G 200 mho V = 5V I = 10mA 40 mho V = -5V I = -10mA OS DS DS DS DS Conductance Drain Source R 350 500 V = 0.1V V = 5V 1200 1800 V = -0.1V V = -5V DS(ON) DS GS DS GS ON Resistance Drain Source BV 10 V I = 1A V = 0V -10 V I = -1A V = 0V DSS DS GS DS GS Breakdown Voltage Off Drain I 10 400 pA V = 10V I = 0V 10 400 pA V = -10V V = 0V DS(OFF) DS GS DS GS Current 4 nA T = 125C4nAT = 125C A A Gate Leakage I 1 100 pA V = 0V V = 10V 1 100 pA V = 0V V = -10V GSS DS GS DS GS Current 1 nA T = 125C1nAT = 125C A A Input C 1 3 pF 1 3 pF ISS Capacitance ALD1115 Advanced Linear Devices 2 of 8