X-On Electronics has gained recognition as a prominent supplier of ALD1115PAL MOSFETs across the USA, India, Europe, Australia, and various other global locations. ALD1115PAL MOSFETs are a product manufactured by Advanced Linear Devices. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ALD1115PAL Advanced Linear Devices

ALD1115PAL electronic component of Advanced Linear Devices
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Part No.ALD1115PAL
Manufacturer: Advanced Linear Devices
Category: MOSFETs
Description: MOSFET Comp N-Channel & P-Channel
Datasheet: ALD1115PAL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.543 ea
Line Total: USD 5.54 
Availability - 1
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 5.543
10 : USD 4.715
50 : USD 4.646
100 : USD 3.9905
250 : USD 3.864
500 : USD 3.5765
1000 : USD 3.151
5000 : USD 3.082

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ALD1115PAL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ALD1115PAL and other electronic components in the MOSFETs category and beyond.

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ADVANCED LINEAR DEVICES, INC. ALD1115 COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1115 is a monolithic complementary N-channel and P-channel Precision current mirrors transistor pair intended for a broad range of analog applications. These Complementary push-pull linear drives enhancement-mode transistors are manufactured with Advanced Linear Discrete analog switches Devices enhanced ACMOS silicon gate CMOS process. It consists of a Analog signal choppers N-channel MOSFET and a P-channel MOSFET in one package. The Differential amplifier input stage ALD1115 is a dual version of the quad complementary ALD1105. Voltage comparator Data converters The ALD1115 offers high input impedance and negative current tempera- Sample and Hold ture coefficient. The transistor pair is designed for precision signal Analog current inverter switching and amplifying applications in +1V to +10V systems where low Precision matched current sources input bias current, low input capacitance and fast switching speed are CMOS inverter stage desired. Since these are MOSFET devices, they feature very large Diode clamps (almost infinite) current gain in a low frequency, or near DC, operating Source followers environment. When connected in parallel with sources, drains and gates connected together, a CMOS analog switch can be constructed. In PIN CONFIGURATION addition, the ALD1115 is intended as a building block for CMOS inverters, differential amplifier input stages, transmission gates, and multiplexer applications. + 1 SN 8 V The ALD1115 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. GN 2 7 DP The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. 3 6 The DC current gain is limited by the gate input leakage current, which is DN GP specified at 100pA at room temperature. V+ is connected to the substrate, - V 4 5 SP which is the most positive voltage potential of the ALD1115, usually SP (5). Similarly, V- is connected to the most negative voltage potential of the ALD1115, usually SN (1). TOP VIEW SAL, PAL PACKAGES FEATURES Thermal tracking between N-channel and P-channel BLOCK DIAGRAM Low threshold voltage of 0.7V for both N-channel and P-channel MOSFETs Low input capacitance 13 High input impedance -- 10 typical GN (2) Low input and output leakage currents Negative current (I ) temperature coefficient DS Enhancement-mode (normally off) 9 DN (3) SN (1) DC current gain 10 Single N-channel MOSFET and single P-channel - V (4) MOSFET in one package ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) Operating Temperature Range* GP (6) 0C to +70C0C to +70C 8-Pin 8-Pin SP (5) DP (7) SOIC Plastic Dip Package Package + V (8) ALD1115SAL ALD1115PAL * Contact factory for high temperature versions. 2021 Advanced Linear Devices, Inc., Vers. 2.2 www.aldinc.com 1 of 8ABSOLUTE MAXIMUM RATINGS Drain-source voltage, V 10V DS Gate-source voltage, V 10V GS Power dissipation 500mW Operating temperature range SAL, PAL packages 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS T = 25C unless otherwise specified A N - Channel Test P - Channel Test Parameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit Conditions Gate Threshold V 0.4 0.7 1.0 V I = 1A V = V -0.4 -0.7 -1.2 V I = -1A V = V T DS GS DS DS GS DS Voltage Gate Threshold Temperature TC -1.2 mV/C -1.3 mV/C VT Drift On Drain I 3 4.8 mA V = V = 5V -1.3 -2 mA V = V = -5V DS (ON) GS DS GS DS Current Trans-. G 1 1.8 mmho V = 5V I = 10mA 0.25 0.67 mmho V = -5V I = -10mA fs DS DS DS DS conductance Output G 200 mho V = 5V I = 10mA 40 mho V = -5V I = -10mA OS DS DS DS DS Conductance Drain Source R 350 500 V = 0.1V V = 5V 1200 1800 V = -0.1V V = -5V DS(ON) DS GS DS GS ON Resistance Drain Source BV 10 V I = 1A V = 0V -10 V I = -1A V = 0V DSS DS GS DS GS Breakdown Voltage Off Drain I 10 400 pA V = 10V I = 0V 10 400 pA V = -10V V = 0V DS(OFF) DS GS DS GS Current 4 nA T = 125C4nAT = 125C A A Gate Leakage I 1 100 pA V = 0V V = 10V 1 100 pA V = 0V V = -10V GSS DS GS DS GS Current 1 nA T = 125C1nAT = 125C A A Input C 1 3 pF 1 3 pF ISS Capacitance ALD1115 Advanced Linear Devices 2 of 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Advanced Linear Devices Inc.
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