X-On Electronics has gained recognition as a prominent supplier of ALD1117PAL MOSFETs across the USA, India, Europe, Australia, and various other global locations. ALD1117PAL MOSFETs are a product manufactured by Advanced Linear Devices. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ALD1117PAL Advanced Linear Devices

ALD1117PAL electronic component of Advanced Linear Devices
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Part No.ALD1117PAL
Manufacturer: Advanced Linear Devices
Category: MOSFETs
Description: MOSFET Dual P-Channel Array
Datasheet: ALD1117PAL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.302 ea
Line Total: USD 5.3 
Availability - 3
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.302
10 : USD 4.51
50 : USD 4.444
100 : USD 3.817
250 : USD 3.696
500 : USD 3.421
1000 : USD 3.014
5000 : USD 2.948

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ALD1117PAL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ALD1117PAL and other electronic components in the MOSFETs category and beyond.

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ADVANCED LINEAR DEVICES, INC. ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance- Precision current mirrors ment mode matched MOSFET transistor arrays intended for a broad Precision current sources range of precision analog applications. The ALD1107/ALD1117 offer Voltage choppers high input impedance and negative current temperature coefficient. The Differential amplifier input stage transistor pairs are matched for minimum offset voltage and differential Voltage comparator thermal response, and they are designed for precision analog switching Data converters and amplifying applications in -2V to -10V systems where low input bias Sample and Hold current, low input capacitance and fast switching speed are desired. Analog signal processing These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1107/ ALD1117 are building blocks for differential amplifier input stages, PIN CONFIGURATION transmission gates, multiplexer applications, current sources and many precision analog circuits. ALD1117 D 1 8 D FEATURES P1 P2 Low threshold voltage of -0.7V G 2 7 G P1 P2 Low input capacitance Low Vos -- 2mV typical S 3 6 S P1 P2 14 typical High input impedance -- 10 Negative current (I ) temperature coefficient DS - + V 4 5 V Enhancement-mode (normally off) 9 DC current gain 10 TOP VIEW SAL, PAL PACKAGES Low input and output leakage currents RoHS compliant ALD1107 ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) D 1 14 D P1 P2 Operating Temperature Range* G 2 13 G P2 P1 0C to +70C 0C to +70C S 3 12 S P1 P2 8-Pin SOIC 8-Pin Plastic Dip - 4 + Package Package V 11 V 5 D 10 D ALD1117SAL ALD1117PAL P4 P3 6 9 G G P3 P4 14-Pin SOIC 14-Pin Plastic Dip Package Package S 7 8 S P4 P3 ALD1107SBL ALD1107PBL TOP VIEW SBL, PBL PACKAGES * Contact factory for high temperature versions. BLOCK DIAGRAMS ALD1107 ALD1117 - V (4) - V (4) D (1) D (14) D (5) D (8) P1 P2 D (10) P4 D (1) P2 P3 P1 ~ ~ G (2) G (13) G (9) G (6) G (2) G (7) P1 P2 P3 P4 P1 P2 + + + V (5) V V S (3) S (6) S (3) S (12) S (8) S (7) P1 P2 P1 P2 P3 P4 (11) (11) 2021 Advanced Linear Devices, Inc., Vers. 2.2 www.aldinc.com 1 of 9ABSOLUTE MAXIMUM RATINGS Drain-source voltage, V -10V DS Gate-source voltage, V -10V GS Power dissipation 500mW Operating temperature range SAL, PAL, SBL, PBL packages 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS T = 25C unless otherwise specified A ALD1107 ALD1117 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions Gate Threshold V -0.4 -0.7 -1.2 -0.4 -0.7 -1.2 V I = -1.0A V = V T DS GS DS Voltage Offset Voltage V 2 10 2 10 mV I = -10A V = V OS DS GS DS V -V GS1 GS2 Gate Threshold Temperature TC -1.3 -1.3 mV/C VT 2 Drift On Drain I -1.3 -2 -1.3 -2 mA V = V = -5V DS(ON) GS DS Current Transconductance G 0.25 0.67 0.25 0.67 mmho V = -5V I = -10mA IS DS DS Mismatch G 0.5 0.5 % fs Output G 40 40 mho V = -5V I = -10mA OS DS DS Conductance Drain Source R 1200 1800 1200 1800 V = -0.1V V = -5V DS(ON) DS GS On Resistance Drain Source On Resistence 0.5 0.5 % V = -0.1V V = -5V DS(ON) DS GS Mismatch Drain Source Breakdown BV -10 -10 V I = -1.0A V = 0V DSS DS GS Voltage Off Drain I 10 400 10 400 pA V = -10V V = 0V DS(OFF) DS GS 1 Current 44nAT = 125C A Gate Leakage I 1 100 1 100 pA V = 0V V = -10V GSS DS GS Current 1 1 nA T = 125C A Input C 13 1 3 pF ISS 2 Capacitance 1 Notes: Consists of junction leakage currents 2 Sample tested parameters ALD1107/ALD1117 Advanced Linear Devices 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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