JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Value Unit Parameter 1.EMILTTER V Collector-Base Voltage 60 V CBO Collector-Emitter Voltage 40 V V CEO 2.BASE Emitter-Base Voltage 6 V V EBO 3. COLLECTOR Collector Current -Continuous I 600 mA C Collector Power dissipation P 0.625 W C Junction Temperature T 150 J Storage Temperature T -55~+150 stg R Thermal Resistance, junction to Ambient 357 /mW JA ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit V I =100A , I=0 60 V Collector-base breakdown voltage (BR)CBO C E V I = 1mA , I=0 40 V Collector-emitter breakdown voltage (BR)CEO C B Emitter-base breakdown voltage V I =100A, I=0 6 V (BR)EBO E C Collector cut-off current I V =35V, I=0 0.1 A CBO CB E Emitter cut-off current I V =5V, I=0 0.1 A EBO EB C h V =1V, I = 0.1mA 20 FE(1) CE C h V =1V, I=1mA 40 FE(2) CE C DC current gain h =1V, I = 10mA 80 FE(3) V CE C h FE(4) V =1V, I=150mA 100 300 CE C h FE(5) V =2V, I = 500mA 40 CE C V I =150 mA, I=15mA 0.4 V CE(sat)1 C B Collector-emitter saturation voltage V I =500 mA, I=50mA 0.75 V CE(sat)2 C B V I =150 mA, I=15mA 0.95 V BE(sat)1 C B Base-emitter saturation voltage V I =500 mA, I=50mA 1.2 V BE(sat)2 C B V = 10V, I = 20mA, CE C Transition frequency f 250 MHz T f=100MHz V =10V, I = 0, CB E Output Capacitance C 6.5 pF ob f=100KHz Delay time t 15 nS d V =30V, V =2V CC BE(OFF) t 20 nS Rise time r I =150mA, I =15mA C B1 Storage time t 225 nS S V =30V, I =150mA CC C Fall time t 30 nS f I =-I = 15mA B1 B2 B,Apr,2012Typical Characteristics 2N4401 h I Static Characteristic FE C 250 1000 COMMON EMITTER COMMON V =1V CE EMITTER 1.0mA T =100 a T =25 0.9mA a 200 0.8mA 0.7mA 300 T =25 a 0.6mA 150 0.5mA 100 0.4mA 100 0.3mA 0.2mA 30 50 I =0.1mA B 0 10 01 23 0.1 0.3 1 3 10 30 100 600 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I CEsat C BEsat C 1000 1.0 300 0.8 T =25 a 100 T =100 a T =25 a T =100 a 0.6 30 =10 =10 10 0.4 1 3 10 30 100 600 1 3 10 30 100 600 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 100 600 COMMON EMITTER f=1MHz V =1V CE I =0/I =0 E C T =25 a T =100 a 100 Cib 30 10 Cob T =25 a 10 3 1 1 1 0.2 0.4 0.6 0.8 1.0 0.1 1 10 20 0.3 3 BASE-EMITTER VOLTAGE V (V) REVERSE BIAS VOLTAGE V (V) BE P T f I C a T C 1000 750 COMMON EMITTER V =10V CE T =25 625 a 500 375 300 250 125 100 0 10 30 100 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a B,Apr,2012 COLLECTOR CURRENT I (mA) TRANSITION FREQUENCY f (MHz) COLLECTOR-EMMITTER SATURATION T COLLECTOR CURRENT I (mA) C C VOLTAGE V (mV) CEsat CAPACITANCE C (pF) BASE-EMMITTER SATURATION DC CURRENT GAIN h COLLECTOR POWER DISSIPATION FE VOLTAGE V (V) P (mW) BEsat C