DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T60S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss nd IGBT 2 Generation Technology, which not only gives high-switching V = 1.85V I = 60A CE(sat) C efficiency, but is also extremely rugged and excellent quality for High Input Impedance applications where low conduction losses are essential. t = 110ns (typ) di /dt = 500A/s rr F E = 0.53mJ T =25 C off C Maximum Junction Temperature 175 C Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Applications Case: TO-247 (Type MC) UPS Case Material: Molded Plastic. Green Molding Compound. Welder UL Flammability Classification Rating 94V-0 Solar Inverter Terminals: Finish Matte Tin Plated Leads. IH Cooker Solderable per MIL-STD-202, Method 208 Weight: 5.6 grams (Approximate) Collector Gate G C Emitter E Device Symbol TO-247 Ordering Information (Note 4) Product Marking Quantity DGTD65T60S2PT DGTD65T60S2 450 per Box in Tubes (Note 5) Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DGTD65T60S2PT Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Emitter Voltage 650 V V CE 100 A T = 25C C DC Collector Current, limited by T I vjmax C T = 100C 60 A C Pulsed Collector Current, t limited by T I 180 A p vjmax Cpuls Turn Off Safe Operating Area V 650V, T = 175C - 180 A CE vj T = 25C 60 A C Diode Forward Current limited by T I vjmax F T = 100C 30 A C Diode Pulsed Current, t limited by T I 200 A vjmax Fpuls p Gate-Emitter Voltage 20 V V GE Short Circuit Withstand Time V 400V, R =7 , V = 15V, T = 150C CC G GE vj tsc 5 s < Allowed Number of Short Circuits 1000 Time Between Short Circuits 1.0s Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 428 T = 25C C Power Dissipation Linear Derating Factor (Note 6) P W D 214 T = 100C C Thermal Resistance, Junction to Ambient (Note 6) 40 R JA Thermal Resistance, Junction to Case for IBGT (Note 6) 0.35 C/W R JC Thermal Resistance, Junction to Case for Diode (Note 6) 1.20 R JC Operating Temperature -40 to +175 T vj C Storage Temperature Range -55 to +150 T STG Note: 6. When mounted on a standard JEDEC 2-layer FR-4 board. 2 of 9 DGTD65T60S2PT March 2018 Diodes Incorporated www.diodes.com Document Number DS39669 Rev. 1 - 2